Si7392ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7392ADP
S-61151Rev.
26-Jun-06
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion
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Si7392ADP
2002/95/EC
Si7392ADP-T1-E3
Si7392ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • High-Side DC/DC Conversion
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Si7392ADP
Si7392ADP-T1-E3
Si7392ADP-T1-GE3
08-Apr-05
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S-61961
Abstract: Si7392ADP Si7392ADP-T1-E3 A2538
Text: Si7392ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ) 12 PowerPAK SO-8 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Si7392ADP
Si7392ADP-T1-E3
S-61961
09-Oct-06
A2538
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion
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Original
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Si7392ADP
2002/95/EC
Si7392ADP-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7392ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si7392ADP
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ) 12 PowerPAK SO-8 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Original
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Si7392ADP
Si7392ADP-T1-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion
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Original
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Si7392ADP
2002/95/EC
Si7392ADP-T1-E3
Si7392ADP-T1-GE3
11-Mar-11
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PDF
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Si7392ADP
Abstract: Si7392ADP-T1-E3
Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • High-Side DC/DC Conversion
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Original
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Si7392ADP
Si7392ADP-T1-E3
Si7392ADP-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ) 12 PowerPAK SO-8 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Original
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Si7392ADP
Si7392ADP-T1-E3
08-Apr-05
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PDF
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SI7392ADP
Abstract: No abstract text available
Text: Si7392ADP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V ID rDS(on) (W) 30 (A)a 0.0075 @ VGS = 10 V 30 0.0115 @ VGS = 4.5 V 30 D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET
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Si7392ADP
Si7392ADP-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7392ADP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V ID rDS(on) (W) 30 (A)a 0.0075 @ VGS = 10 V 30 0.0115 @ VGS = 4.5 V 30 D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET
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Si7392ADP
Si7392ADP-T1
51803--Rev.
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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