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    SI4403CDY Price and Stock

    Vishay Siliconix SI4403CDY-T1-GE3

    MOSFET P-CH 20V 13.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4403CDY-T1-GE3 Cut Tape 9,283 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
    • 10000 $0.3395
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    SI4403CDY-T1-GE3 Digi-Reel 9,283 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
    • 10000 $0.3395
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    SI4403CDY-T1-GE3 Reel 7,500 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.30177
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    New Advantage Corporation SI4403CDY-T1-GE3 5,000 1
    • 1 -
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    • 1000 -
    • 10000 $0.2
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    Vishay Intertechnologies SI4403CDY-T1-GE3

    Trans MOSFET P-CH 20V 9.4A 8-Pin SO T/R - Tape and Reel (Alt: SI4403CDY-T1-GE3)
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    Avnet Americas SI4403CDY-T1-GE3 Reel 2,500 16 Weeks 2,500
    • 1 -
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    • 10000 $0.237
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    SI4403CDY-T1-GE3 Reel 16 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.20671
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    Mouser Electronics SI4403CDY-T1-GE3 47,239
    • 1 $1.05
    • 10 $0.679
    • 100 $0.459
    • 1000 $0.33
    • 10000 $0.25
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    Newark SI4403CDY-T1-GE3 Cut Tape 27,989 5
    • 1 $0.826
    • 10 $0.679
    • 100 $0.489
    • 1000 $0.489
    • 10000 $0.489
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    SI4403CDY-T1-GE3 Reel 2,500
    • 1 $0.352
    • 10 $0.352
    • 100 $0.352
    • 1000 $0.352
    • 10000 $0.318
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    Bristol Electronics SI4403CDY-T1-GE3 10,040
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    TTI SI4403CDY-T1-GE3 Reel 30,000 2,500
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    • 10000 $0.241
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    TME SI4403CDY-T1-GE3 2,139 1
    • 1 $0.675
    • 10 $0.509
    • 100 $0.437
    • 1000 $0.395
    • 10000 $0.374
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    Avnet Asia SI4403CDY-T1-GE3 19 Weeks 2,500
    • 1 -
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    • 10000 $0.30521
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    EBV Elektronik SI4403CDY-T1-GE3 17 Weeks 2,500
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    Vishay Intertechnologies SI4403CDY-T1-GE3.

    Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv; Power Dissipation:5W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI4403CDY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4403CDY-T1-GE3. Reel 2,500 2,500
    • 1 $0.237
    • 10 $0.237
    • 100 $0.237
    • 1000 $0.237
    • 10000 $0.237
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    Others SI4403CDYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4403CDYT1GE3 54,000
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    Vishay Intertechnologies SI4403CDYT1GE3

    P-CHANNEL 1.8 V (G-S) MOSFET Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4403CDYT1GE3 2,151
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    Find more SI4403CDY price and stock on Findchips.com

    SI4403CDY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4403CDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 13.4A 8SOIC Original PDF

    SI4403CDY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    67341

    Abstract: si4403C si4403
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    67341

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 11-Mar-11 67341 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4403CDY 18-Jul-08 PDF

    MOSFET SO-8

    Abstract: No abstract text available
    Text: Specification Comparison Vishay Siliconix Si4403CDY vs. Si4403BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4403CDY-T1-GE3 replaces Si4403BDY-T1-GE3 Si4403CDY-T1-GE3 replaces Si4403BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si4403CDY Si4403BDY Si4403CDY-T1-GE3 Si4403BDY-T1-GE3 Si4403BDY-T1-E3 23-Mar-11 MOSFET SO-8 PDF

    25783

    Abstract: 2578-3 51540 676-42
    Text: Si4403CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si4403CDY AN609, 2462m 6127m 2152m 9573u 2530m 9287m 7235m 25783 2578-3 51540 676-42 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4403CDY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4403CDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF