NC7001
Abstract: 3 to 10 GHz bandpass filter 3 to 7 GHz bandpass filter
Text: SAW Bandpass Filter F1G56 Features z GPS applications z Usable bandwidth of 2 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 2 3 3 2 4 4 1 LQ
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F1G56
300mm/min
NC7001-AS02
NC7001
3 to 10 GHz bandpass filter
3 to 7 GHz bandpass filter
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FC 0137
Abstract: No abstract text available
Text: SAW Bandpass Filter F1G95 Features z US-PCS applications z Usable bandwidth of 30 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 4 3 3 1 2 2 4
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F1G95
300mm/min
NC7006-AS01
FC 0137
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3 to 10 GHz bandpass filter
Abstract: No abstract text available
Text: SAW Bandpass Filter AGSF-G56 Features z GPS applications z Usable bandwidth of 2 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 2 3 3 2 1 4 4
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AGSF-G56
300mm/min
3 to 10 GHz bandpass filter
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mark 641
Abstract: bandpass filter 190 mhz 7261 Ink
Text: SAW Bandpass Filter F1G84 Features US-PCS applications Usable bandwidth of 60 MHz No impedance matching require for operation at 50 Ω SMD Package 2.0 mm x 1.6 mm× 0.6 mm Single-ended Operation RoHS Compliant Package Dimensions AN g1 Pin Configurations
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F1G84
300mm/min
NC7005-AS02
mark 641
bandpass filter 190 mhz
7261 Ink
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MURATA LQW18A
Abstract: smd marking s22 s11 mark smd
Text: NSVA528 Apr. 2013 NewJRC SAW FILTER NSVA528 Application Cordless telephone Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Input and Output Impedance Nominal Center Frequency (f0)
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NSVA528
NSVA528
927MHz
1500MHz
903MHz
1500MHz
903MHz
927MHz
MURATA LQW18A
smd marking s22
s11 mark smd
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DEA162450BT-1210A2
Abstract: DEA202450BT-1195A1 DEA202450BT-1213B1 DEA252400BT-2027A1 DEA252450BT-2024C1 DEA252450BT-2030A1 DEA252450BT-2031A1 DEA252450BT-2037C1 DEA312450BT-2010A1 DEA322448BT-2009
Text: TDK RF Products for Wireless LAN 3/5/2004 for 2.4GHz Multilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2497 2.0 2400 2500 2.3 2400 2500 1.2 2300 2500 1.4 2400 2500 1.5 2400 2500 2.1 2400 2500 3.0 2400 2500 1.5 2400 2500 2.3
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CF61A4601
S0400
1950MHz
DEA162450BT-1210A2
DEA202450BT-1195A1
DEA202450BT-1213B1
DEA252400BT-2027A1
DEA252450BT-2024C1
DEA252450BT-2030A1
DEA252450BT-2031A1
DEA252450BT-2037C1
DEA312450BT-2010A1
DEA322448BT-2009
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DEA252450BT-2024C1
Abstract: DEA252450BT-2030A1 DEA252400BT-2027A1 2525-size DEA252400BT-2030A1 DEA252450BT-2031A1 DEA312450BT-2010A1 DEA322448BT-2009 DEA162450BT-1210A2 DEA202450BT-1195A1
Text: TDK RF Products for Wireless LAN 6/5/2003 for 2.4GHz Multilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2497 2.0 2400 2500 2.3 2400 2500 1.2 2300 2500 1.4 2400 2500 1.5 2400 2500 2.1 2400 2500 2.3 2400 2500 3.0 MHz 1990 1250
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CF61A4601
S0400
1950MHz
DEA252450BT-2024C1
DEA252450BT-2030A1
DEA252400BT-2027A1
2525-size
DEA252400BT-2030A1
DEA252450BT-2031A1
DEA312450BT-2010A1
DEA322448BT-2009
DEA162450BT-1210A2
DEA202450BT-1195A1
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MGF0914A
Abstract: fet 4901 0648
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0914A
MGF0914A
26dBm
800mA
50ohm
fet 4901
0648
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
Unit39
50ohm
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DEA205425BT-2028A4
Abstract: smd marking S21 CF61A4401 CF61A4501 CF61A4901 DEA165487BT-1202 DEA205425BT-1209B2 DEA205437BT-1200 DEA205462BT-2023 DEA205462BT-2025A1
Text: TDK Products for Wireless LAN 2003/6/5 for 5GHz Wide Band Mutilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB (MAX) 5150 5900 2.2 5150 5900 1.5 4900 5950 1.5 5100 5825 1.9 5150 5875 2.0 4900 5950 2.0 MHz 3450 3450 3450 1795 4120 1795 dB
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DEA165487BT-1202
S0356
5425MHz
5625MHz
5975MHz
6175MHz
DEA205425BT-2028A4
smd marking S21
CF61A4401
CF61A4501
CF61A4901
DEA165487BT-1202
DEA205425BT-1209B2
DEA205437BT-1200
DEA205462BT-2023
DEA205462BT-2025A1
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marking SA "SAW filter"
Abstract: LQW18ANR10G00D NSVS1094 TZY2Z2R5A001B00 s11 mark smd
Text: NSVS1094 Mar-04 JRC SAW FILTER UNDER DEVELOPMENT NSVS1094 Application 248.45MHz PHS Base-station Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Nominal Center Frequency (f0)
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NSVS1094
Mar-04
NSVS1094
45MHz
100kHz
600kHz
45MHz
130kHz
marking SA "SAW filter"
LQW18ANR10G00D
TZY2Z2R5A001B00
s11 mark smd
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s11 mark smd
Abstract: smd manufacture S7 marking SA "SAW Filter" LQW18ANR10G00D IT 243 NSVS1097 marking S22
Text: NSVS1097 Mar-04 JRC SAW FILTER UNDER NSVS1097 DEVELOPMENT Application 243.95MHz PHS Base-Station Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Nominal Center Frequency (f0)
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NSVS1097
Mar-04
NSVS1097
95MHz
100kHz
600kHz
95MHz
130kHz
s11 mark smd
smd manufacture S7
marking SA "SAW Filter"
LQW18ANR10G00D
IT 243
marking S22
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2028b
Abstract: 3POLE DEA205425BT-2028B1 CF61A4401 CF61A4501 CF61A4901 DEA165487BT-1202 DEA205425BT-1209 DEA205437BT-1200 DEA205462BT-2023
Text: TDK Products for Wireless LAN 2/7/2002 for 5GHz Wide Band Mutilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB (MAX) 5150 5900 1.5 4900 5950 1.5 5100 5825 1.9 5150 5875 2.0 4900 5950 2.0 5100 5825 2.2 MHz 3450 3450 3500 3450 3450 3450 dB
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DEA205437BT-1200
DEA205425BT-1209
DEA205462BT-2023
DEA205462BT-2025
DEA205425BT-2028B1
DEA165487BT-1202
S0356
5425MHz
5625MHz
2028b
3POLE
DEA205425BT-2028B1
CF61A4401
CF61A4501
CF61A4901
DEA165487BT-1202
DEA205425BT-1209
DEA205437BT-1200
DEA205462BT-2023
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MGF0919A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
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SCL 1058
Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
SCL 1058
GP145
IDS800
fet GP145
3268
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MGF0915A
Abstract: SCL 1058
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
SCL 1058
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SMD GP 113
Abstract: MGF0921A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
SMD GP 113
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MGF0917A
Abstract: gp 801 pt 11400
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
50pcs)
gp 801
pt 11400
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mitsubishi 7805
Abstract: 7805 pi MGF0918A 7805 smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
50pcs)
d-162
mitsubishi 7805
7805 pi
7805 smd
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FET K 1358
Abstract: MGF0916A gp 752 9452 smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
50pcs)
FET K 1358
gp 752
9452 smd
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
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BL2012
Abstract: ACX Multilayer Chip BL2012-10B3301 ACX balun multilayer GHz
Text: ACX Advanced Ceramic X BL 2012 Series Multilayer Chip Baluns Features Monolithic SMD with small, low-profile and light-weight type. Applications 0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN,
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BL201210B3301_
BL2012
ACX Multilayer Chip
BL2012-10B3301
ACX balun
multilayer GHz
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diode gp 429
Abstract: MGF0921A 9014 SMD gp 429 pin smd diode ID 80 C 1541
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
diode gp 429
9014 SMD
gp 429 pin smd diode
ID 80 C 1541
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MGF0913A
Abstract: 1709-1
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
1709-1
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