MGF0914A
Abstract: fet 4901 0648
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0914A
MGF0914A
26dBm
800mA
50ohm
fet 4901
0648
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fet 4901
Abstract: MGF0914A 15815 an 17827
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0914A L & S BAND G aAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING umt:mm The M G F 0 91 4A G aA s F E T w ith an N -ch an nel sch to kky Gate Mark G ate, is d e sig n e d fo r use U H F band am plifiers.
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OCR Scan
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PDF
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MGF0914A
MGF0914A
fet 4901
15815
an 17827
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Unit: FEATURES • High output power
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OCR Scan
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PDF
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MGF0914A
MGF0914A
26dBm
800mA
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