VD F1 SMD
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
VD F1 SMD
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SMD GP 113
Abstract: MGF0921A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
SMD GP 113
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MGF0921A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:
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MGF0921A
95GHz
MGF0921A
25deg
data10V
-900KHz)
900KHz)
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MGF0921A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:
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MGF0921A
MGF0921A
35GHz
25deg
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idq04
Abstract: 60Ghz MGF0921A
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 24 th Mar. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:
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MGF0921A
MGF0921A
25deg
-10MHz)
10MHz)
idq04
60Ghz
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
June/2004
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
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MGF0921A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:
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MGF0921A
17GHz
MGF0921A
14GHz
25deg
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diode gp 429
Abstract: MGF0921A 9014 SMD gp 429 pin smd diode ID 80 C 1541
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
diode gp 429
9014 SMD
gp 429 pin smd diode
ID 80 C 1541
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MGF0921A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:
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MGF0921A
95GHz
MGF0921A
25deg
data10V
-900KHz)
900KHz)
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9014 SMD
Abstract: diode gp 429 gp 429 pin smd diode MGF0921A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
9014 SMD
diode gp 429
gp 429 pin smd diode
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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SPP02N60
SPP03N60
SPP04N60
SPP07N60
SPP11N60
SPP20N60
SPW11N60
SPW20N60
SPW47N60
SPP02N80
MGF4919G
SP*02N60
SPP11N80
to-220 smd
MGF1601
SPW47N60
MGF0905A
SPW11N80
SPP11N60
SPP20N60
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0921A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=33dBm TYP. @ f=1,9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
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