Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
June/2004
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MGF0913A
Abstract: mmz12
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR : 2 nd Mar 2007 Date SUBJECT: RF Characteristic of MGF0913A in 800 to 900 MHz-band SUMMARY: This application note shows RF characteristics of MGF0913A Measurement conditions are as follows : Modulated signal; W - CDMA 3GPP TEST MODEL1 64ch's 1carrier
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MGF0913A
MGF0913A
CCL-870HL
mmz12
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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12W SMD
Abstract: MGF0913A smd GP 928
Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
-65ctric
12W SMD
smd GP 928
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
Unit39
50ohm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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MGF0913A
Abstract: No abstract text available
Text: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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s3v 8d
Abstract: cm 3593
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31 dBm TYP. @ f=1,9GHz,Pin=18dBm
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MGF0913A
MGF0913A
18dBm
s3v 8d
cm 3593
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MGF0913A
Abstract: 1709-1
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
1709-1
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