Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGF0915A Search Results

    MGF0915A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF0915A Mitsubishi TRANS JFET N-CH 10V 3000MA 3HERMETIC Original PDF
    MGF0915A Mitsubishi L & S BAND GaAs FET Original PDF
    MGF0915A Mitsubishi L & S BAND GaAs FET Original PDF
    MGF0915A Mitsubishi L & S BAND GaAs FET Original PDF

    MGF0915A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCL 1058

    Abstract: GP145 IDS800 MGF0915A fet GP145 3268
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm 50pcs) SCL 1058 GP145 IDS800 fet GP145 3268

    MGF0915A

    Abstract: SCL 1058
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm 50pcs) SCL 1058

    60Ghz

    Abstract: MGF0915A a4013
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm 50pcs) 60Ghz a4013

    gp145dbf19ghz

    Abstract: MGF0915A GP 0619 fet 2255
    Text: 三菱半導体〈高周波デバイス〉 MGF0915A L & S帯高出力GaAs FET 概 要 M G F 09 1 5 A は U H F 帯 で の 増 幅 器 用 に 設 計 さ れ たN チ ャ ネ ル 外形図 単位:mm 0.80 Gate Mark Round corner GaAs FETです。


    Original
    PDF MGF0915A Pin23dBm add50f1 IDS800mA Rg100 VDS10V 800mA 800mA57 gp145dbf19ghz MGF0915A GP 0619 fet 2255

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A - - Sample history:


    Original
    PDF MGF0915A 95GHz MGF0915 MGF0915A 25deg -900KHz) 900KHz) -600KHz)

    idq06

    Abstract: MGF0915A
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A - - Sample history:


    Original
    PDF MGF0915A MGF0915A 35GHz 25deg idq06

    GP145

    Abstract: MGF0915A PO36 MGF0915 fet GP145
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original
    PDF MGF0915A MGF0915A 26dBm 800mA GP145 PO36 MGF0915 fet GP145

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A - - Sample history:


    Original
    PDF MGF0915A MGF0915A 25deg 1000pF 51ohm

    MGF0915A

    Abstract: idq06
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A - -


    Original
    PDF MGF0915A 17GHz MGF0915 MGF0915A 14GHz 25deg idq06

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A - - Sample history:


    Original
    PDF MGF0915A MGF0915A 35GHz 25deg

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm 50pcs)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm 50pcs) June/2004

    FET K 3728

    Abstract: an 17830 IDS800 MGF0915A 4604 smd fet PO 168 GP 703
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm FET K 3728 an 17830 IDS800 4604 smd fet PO 168 GP 703

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0915A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm 800mA 50pcs)

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A - - Sample history:


    Original
    PDF MGF0915A MGF0915 MGF0915A 25deg -10MHz) 10MHz) 61GHz

    smd 662

    Abstract: MGF0915A 1084 fet smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original
    PDF MGF0915A MGF0915A 23dBm smd 662 1084 fet smd

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original
    PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original
    PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    GP145

    Abstract: MGF0915
    Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power


    OCR Scan
    PDF MGF0915A MGF0915A 26dBm GP145 MGF0915

    MGF0915A

    Abstract: GP145 MGF0915 PQ-32/CTD-17765
    Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm TYP. @ f=1.9GHz,Pin=23dBm


    OCR Scan
    PDF MGF0915A MGF0915A 23dBm GP145 MGF0915 PQ-32/CTD-17765

    an 17830 A

    Abstract: 4604 SMD 8 PIN RG-100-2 SEM 2006 0729 an 17830
    Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @ f=1.9G Hz,Pin=23dBm


    OCR Scan
    PDF MGF0915A MGF0915A 23dBm curren-167 an 17830 A 4604 SMD 8 PIN RG-100-2 SEM 2006 0729 an 17830