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    MGF0917A Search Results

    MGF0917A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF0917A Mitsubishi TRANS JFET N-CH 10V 200MA 3HERMETIC Original PDF
    MGF0917A Mitsubishi L & S BAND GaAs FET Original PDF

    MGF0917A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGF0917A

    Abstract: gp 801 pt 11400
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


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    MGF0917A MGF0917A 24dBm 50pcs) gp 801 pt 11400 PDF

    MGF0917A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original
    MGF0917A MGF0917A 24dBm 50pcs) June/2004 PDF

    gm 4511

    Abstract: GP 841 Diode MGF0917A scl 1444
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original
    MGF0917A MGF0917A 24dBm gm 4511 GP 841 Diode scl 1444 PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm


    Original
    MGF0917A MGF0917A 24dBm 50pcs) PDF

    GP 841 Diode

    Abstract: 4511 gm GG SMD MGF0917A K 3561 fet 2255
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original
    MGF0917A MGF0917A 24dBm GP 841 Diode 4511 gm GG SMD K 3561 fet 2255 PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm


    Original
    MGF0917A MGF0917A 24dBm 50pcs) PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original
    SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    4511 gm

    Abstract: MGF0917A
    Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0917A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=24dBm TYP. @ f=1.9GHz,Pin=4dBm


    OCR Scan
    MGF0917A MGF0917A 24dBm 4511 gm PDF