EPA240D
Abstract: No abstract text available
Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA240D
33dBm
EPA240D
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Untitled
Abstract: No abstract text available
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
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TOSHIBA MICROWAVE AMPLIFIER
Abstract: TMD1013-1-431 TOSHIBA TMD1013-1-431
Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES High Power P1dB=33dBm TYP. High Power Added Efficiency ηadd=14%(TYP.) High Gain G1dB=25dB(TYP.) Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°
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TMD1013-1-431
33dBm
000pF
TOSHIBA MICROWAVE AMPLIFIER
TMD1013-1-431
TOSHIBA TMD1013-1-431
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Untitled
Abstract: No abstract text available
Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
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EMM5329ZW
Abstract: V23133 marking code V3.V
Text: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS
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EMM5329ZW
33dBm
SC-70
OT363
EMM5329ZW
V23133
marking code V3.V
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RFMA7185
Abstract: No abstract text available
Text: RFMA7185 -2W 7.10 – 8.50 GHz Power Amplifier MMIC UPDATED 01/14/05 FEATURES • • • • 7.10– 8.50GHz Operating Frequency Range 33dBm Output Power at 1dB Compression 30.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @ each tone Pout 22dBm
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RFMA7185
50GHz
33dBm
-45dBc
22dBm
RFMA7185
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EMP103B
Abstract: No abstract text available
Text: EMP103B DATA SHEET 6.4 – 8.0 GHz Power Amplifier MMIC ISSUED DATE: 02-24-04 FEATURES • • • 6.4 – 8.0 GHz Bandwidth 33dBm Output Power at 1dB Compression 14 dB Typical Power Gain APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C
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EMP103B
33dBm
3000x2200microns
950mA
EMP103B
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RF5110
Abstract: No abstract text available
Text: RF5111 DRAFT DRAFT 3V DCS POWER AMPLIFIER VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and
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16-Pin,
RF5111
33dBm
1700MHz
1950MHz
DCS1800
PCS1900
DCS1800
DCS1900
RF5110
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VD F1 SMD
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
VD F1 SMD
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Untitled
Abstract: No abstract text available
Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz
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RT233
50MHz
33dBm
36dBm
900MHz
IMT-2000
WP-22
RT233
IMT-2000,
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SMD GP 113
Abstract: MGF0921A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
SMD GP 113
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ED-1402
Abstract: No abstract text available
Text: +12 to +33dBm Limiter 50Ω Broadband VLM-63-2W+ 30 to 6000 MHz The Big Deal • Protection against up to 2.5 W of unwanted input signals • Wide frequency range, 30 MHz-6 GHz • Very fast recovery time, 5 nsec typ. CASE STYLE: FF704 Product Overview The VLM-63-2W+ reacts almost instantaneously to protect sensitive devices from power surges and other unwanted signals
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33dBm
VLM-63-2W+
FF704
M130449
ED-14025/2
ED-1402
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MAX2032
Abstract: tuned oscilator 1029-TC BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2039 MAX2041
Text: KIT ATION EVALU E L B AVAILA 19-4965; Rev 0; 9/09 High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2032 high-linearity passive upconverter or downconverter mixer is designed to provide +33dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to
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650MHz
1000MHz
MAX2032
33dBm
1250MHz
MAX2029.
tuned oscilator
1029-TC
BPF filter rf
JESD51-7
MABAES0029
MAX2029
MAX2039
MAX2041
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MASW-005100-1194
Abstract: No abstract text available
Text: MASW-005100-1194 HMIC SP5T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 38dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-005100-1194
50MHz
26GHz
20GHz
33dBm
MASW-005100-1194
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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TGA1141-EPU
33dBm
34dBm
880mA
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information September 21, 2005 2W Q-Band High Power Amplifier TGA4046 Key Features • • • • • • • Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A 0.15 um 3MI pHEMT Technology
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TGA4046
33dBm
32dBm
TGA4046
46GHz.
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Untitled
Abstract: No abstract text available
Text: Advance Product Information August 26, 2002 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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TGA1141-EPU
33dBm
34dBm
880mA
0007-inch
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MCH18
Abstract: ZO13 0805HQ-5N6XJBB
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
MCH18
ZO13
0805HQ-5N6XJBB
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Untitled
Abstract: No abstract text available
Text: Preliminary ES/EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package
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ES/EMM5329ZW
33dBm
SC-70
OT363
ES/EMM5329ZW
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Untitled
Abstract: No abstract text available
Text: Advance Product Information October 21, 2004 2W Q-Band High Power Amplifier TGA4046-EPU Key Features • • • • • • • Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A
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TGA4046-EPU
33dBm
32dBm
TGA4046-EPU
46GHz.
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15 GHz high power amplifier
Abstract: 8401 AMCOM Communications wireless AM131533SF-3H
Text: The RF Power House 1.3 - 1.5 GHz - 2 Watt Power Amplifier AM131533SF-3H DESCRIPTION AMCOM’s AM131533SF-3H is a 3-stage power amplifier in aluminum housing with input and output SMA connectors. It has 30dB gain, 33dBm output power over the 1.35 to 1.5 GHz Band.
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AM131533SF-3H
AM131533SF-3H
33dBm
33dBm
15 GHz high power amplifier
8401
AMCOM Communications
wireless
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DCS1800
Abstract: EGSM900 GSM900 IPC-SM-782 RF3198 RF3198PCBA-41X
Text: RF3198 DUAL-BAND GSM900/DCS POWER AMP MODULE Package Style: LFM, 48-Pin, 7mmx7mmx0.9mm DCS IN 37 Features BAND SELECT 40 Integrated VREG Complete Power Control Solution +35dBm GSM Output Power at 3.5V +33dBm DCS Output Power at 3.5V 60% GSM and 55% DCS EFF
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RF3198
GSM900/DCS
48-Pin,
35dBm
33dBm
EGSM900/DCS
RF3198
203mm
330mm
025mm
DCS1800
EGSM900
GSM900
IPC-SM-782
RF3198PCBA-41X
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SMM-280-2
Abstract: No abstract text available
Text: SMM-280-2 1.5-2.7 GHz, 2 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 33dBm Output Power - High Third Order Intercept, +43dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package Description Stanford Microdevices' SMM-280-2 is a high performance
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SMM-280-2
33dBm
43dBm
1800mA
500mW
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Untitled
Abstract: No abstract text available
Text: SHF-0500 DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +33dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +43dBm Output 3rd Order Intercept Point - Low Cost Copper Tungsten Package
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SHF-0500
33dBm
43dBm
F-500
450mA)
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