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Radiall VS102880 Circular MIL Spec Connector VS102880
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VS102880					1 $61.37 10 $57.76 100 $49.45 1000 $49.45 10000 $49.45	Get Quote
TURCK Inc RKC 4.5T-5/CS10288 Ceu \|Turck RKC 4.5T-5/CS10288
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RKC 4.5T-5/CS10288	Bulk			1	1 $53.4 10 $53.4 100 $53.4 1000 $53.4 10000 $53.4	Buy Now
TURCK Inc RKC 4.5T-10/CS10288 Ceu \|Turck RKC 4.5T-10/CS10288
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RKC 4.5T-10/CS10288	Bulk			1	1 $77.8 10 $77.8 100 $77.8 1000 $77.8 10000 $77.8	Buy Now
TURCK Inc RKC 4.5T-14/CS10288 Ceu \|Turck RKC 4.5T-14/CS10288
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RKC 4.5T-14/CS10288	Bulk			1	1 $108.3 10 $108.3 100 $108.3 1000 $108.3 10000 $108.3	Buy Now
TURCK Inc RKC 4.5T-30/CS10288 Ceu \|Turck RKC 4.5T-30/CS10288
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RKC 4.5T-30/CS10288	Bulk			1	1 $199.8 10 $199.8 100 $199.8 1000 $199.8 10000 $199.8	Buy Now

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S10288 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SiS472DN Abstract: SIS472DN-T1-GE3 Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	SiS472DN 2002/95/EC SiS472DN-T1-GE3 11-Mar-11	PDF
S10-28 Abstract: Si4288DY Text: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4288DY 18-Jul-08 S10-28	PDF
Si4909DY Abstract: No abstract text available Text: SPICE Device Model Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4909DY 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	SiR870DP 2002/95/EC SiR870DP-T1-GE3 11-Mar-11	PDF
Si9945BDY Abstract: si9945b Text: SPICE Device Model Si9945BDY Vishay Siliconix Dual N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si9945BDY 18-Jul-08 si9945b	PDF
SIR870 Abstract: No abstract text available Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	SiR870DP 2002/95/EC SiR870DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR870	PDF
Untitled Abstract: No abstract text available Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21	Original	SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	SiR870DP 2002/95/EC SiR870DP-T1-GE3 18-Jul-08	PDF
SIS472DN-T1-GE3 Abstract: No abstract text available Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	SiS472DN 2002/95/EC SiS472DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: PRODUCT NO 28.0 !j;f - 9054-8-601 26.0 0.2 ON TIP 0.13 ON BASE 2.0 0.1 NON ACCUM 0.2 . ON TIP i 2.0 * DATE DESCRIPTION ECR S10288 RLSO BS LOW BY ECR S20202 BS LOW 25JUL92 ECR S20292 BS LOW 280CT92 ECR S20300 BS LOW Q3N0V92 ECR S30073 YB TAN 03MAR93 28AUG91	OCR Scan	28AUG91 25JUL92 S10288 S20202 S20292 280CT92 Q3N0V92 03MAR93 S20300 S30073	PDF