Datasheet Archive: SI4288DY datasheets

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Vishay Siliconix SI4288DY-T1-GE3 MOSFET 2N-CH 40V 9.2A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4288DY-T1-GE3	Digi-Reel	6,998		1	1 $1.93 10 $1.23 100 $0.8293 1000 $0.60233 10000 $0.60233	Buy Now
	SI4288DY-T1-GE3	Cut Tape	6,998		1	1 $1.93 10 $1.23 100 $0.8293 1000 $0.60233 10000 $0.60233	Buy Now
	SI4288DY-T1-GE3	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.5	Buy Now
RS	SI4288DY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.28	Get Quote
Quest Components	SI4288DY-T1-GE3		40			1 $1.715 10 $1.372 100 $0.8575 1000 $0.8575 10000 $0.8575	Buy Now
New Advantage Corporation	SI4288DY-T1-GE3		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.7464	Buy Now
Vyrian	SI4288DY-T1-GE3		35,673			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4288DY-T1-GE3 DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4288DY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SI4288DY-T1-GE3	Reel	5,000	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.48426	Buy Now
	SI4288DY-T1-GE3	Ammo Pack		7 Weeks, 4 Days	1	1 $1.48 10 $1.12 100 $0.83 1000 $0.83 10000 $0.83	Buy Now
Mouser Electronics	SI4288DY-T1-GE3		14,255			1 $1.61 10 $1.15 100 $0.83 1000 $0.603 10000 $0.505	Buy Now
Verical	SI4288DY-T1-GE3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.529	Buy Now
Arrow Electronics	SI4288DY-T1-GE3		2,500	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.5342	Buy Now
Newark ()	SI4288DY-T1-GE3	Cut Tape	21,202		1	1 $1.47 10 $1.14 100 $0.834 1000 $0.628 10000 $0.579	Buy Now
	SI4288DY-T1-GE3	Reel	20,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.787	Buy Now
	SI4288DY-T1-GE3	Cut Tape			1	1 $0.471 10 $0.471 100 $0.471 1000 $0.471 10000 $0.471	Buy Now

TTI	SI4288DY-T1-GE3	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.488	Buy Now
TME	SI4288DY-T1-GE3		4,572		1	1 $1.23 10 $1.1 100 $0.88 1000 $0.81 10000 $0.81	Buy Now
Rutronik	SI4288DY-T1-GE3	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.62	Buy Now
Avnet Asia	SI4288DY-T1-GE3			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI4288DY-T1-GE3			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4288DY-T1-GE3. Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:40V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:9.2A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes \|Vishay SI4288DY-T1-GE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI4288DY-T1-GE3.	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.787	Buy Now

SI4288DY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4288DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 9.2A 8SO		Original	PDF

SI4288DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S10-28 Abstract: Si4288DY Contextual Info: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4288DY 18-Jul-08 S10-28	PDF
Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested	Original	Si4288DY 2002/95/EC Si4288DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si4288 Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested	Original	Si4288DY 2002/95/EC Si4288DY-T1-GE3 11-Mar-11 si4288	PDF
Contextual Info: Si4288DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4288DY AN609, 1234m 9196u 2191m 1132u 3313m 9361m 2223m	PDF
si4288 Abstract: SO-8 gs 069 si42 SI4288DY-T1-GE3 Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested	Original	Si4288DY 2002/95/EC Si4288DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4288 SO-8 gs 069 si42	PDF
Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested	Original	Si4288DY 2002/95/EC Si4288DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF

SI4288DY Search Results

SI4288DY Price and Stock

Vishay Siliconix SI4288DY-T1-GE3

Vishay Intertechnologies SI4288DY-T1-GE3

Vishay Intertechnologies SI4288DY-T1-GE3.

SI4288DY Datasheets (1)

SI4288DY Datasheets Context Search

S10-28

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