SIS472DN Search Results
SIS472DN Price and Stock
Vishay Siliconix SIS472DN-T1-GE3MOSFET N-CH 30V 20A PPAK1212-8 |
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SIS472DN-T1-GE3 | Cut Tape | 17,539 | 1 |
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Vishay Intertechnologies SIS472DN-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS472DN-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS472DN-T1-GE3 | Reel | 15 Weeks | 3,000 |
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SIS472DN-T1-GE3 | 2,900 |
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SIS472DN-T1-GE3 | 3,986 |
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SIS472DN-T1-GE3 | 3,188 |
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SIS472DN-T1-GE3 | Reel | 3,000 |
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SIS472DN-T1-GE3 | 1 |
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SIS472DN-T1-GE3 | 16 Weeks | 3,000 |
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SIS472DN Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
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Datasheet Type |
PDF |
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| SIS472DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20A 1212-8 | Original |
SIS472DN Datasheets Context Search
Catalog Datasheet |
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SiS472DN
Abstract: SIS472DN-T1-GE3
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Original |
SiS472DN 2002/95/EC SiS472DN-T1-GE3 11-Mar-11 | |
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Contextual Info: SiS472DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiS472DN AN609, 9144u 6067m 9348m 1698m 7753m 3781u 5039u | |
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Contextual Info: SPICE Device Model SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS472DN 18-Jul-08 | |
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Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
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SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SIS472DN-T1-GE3Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiS472DN 2002/95/EC SiS472DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Vishay Intertechnology, Inc. Telecommunications Mobile One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Mobile Smartphones 4 Wireless Modems 5 Wireless Charging 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6761-1212 | |
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Contextual Info: Vishay Intertechnology, Inc. Telecommunications Mobile One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications モバイル コミュニケーション スマートフォン 4 ワイヤレスモデム 5 |
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VMN-MS6792-1304-TETM |