SIR870 Search Results
SIR870 Price and Stock
Vishay Siliconix SIR870ADP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
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SIR870ADP-T1-GE3 | Cut Tape | 9,904 | 1 |
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SIR870ADP-T1-GE3 | 6,000 | 1 |
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Vishay Siliconix SIR870BDP-T1-RE3MOSFET N-CH 100V 18.8A/81A PPAK |
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SIR870BDP-T1-RE3 | Cut Tape | 6,053 | 1 |
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Vishay Siliconix SIR870DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
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SIR870DP-T1-GE3 | Cut Tape | 3,070 | 1 |
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Vishay Intertechnologies SIR870ADP-T1-GE3Power MOSFET, N Channel, 100 V, 60 A, 0.0055 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SIR870ADP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR870ADP-T1-GE3 | Reel | 15,000 | 28 Weeks | 3,000 |
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SIR870ADP-T1-GE3 | 8,549 |
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SIR870ADP-T1-GE3 | 1,325 | 7 |
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SIR870ADP-T1-GE3 | Cut Strips | 1,325 | 28 Weeks | 1 |
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SIR870ADP-T1-GE3 | Cut Tape | 39,127 | 1 |
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SIR870ADP-T1-GE3 | Reel | 9,000 | 3,000 |
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SIR870ADP-T1-GE3 | 511 |
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SIR870ADP-T1-GE3 | 31 Weeks | 3,000 |
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SIR870ADP-T1-GE3 | 29 Weeks | 3,000 |
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SIR870ADP-T1-GE3 | 12,864 |
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Vishay Intertechnologies SIR870BDP-T1-RE3Power MOSFET, N Channel, 100 V, 81 A, 0.0048 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SIR870BDP-T1-RE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR870BDP-T1-RE3 | Reel | 6,000 | 21 Weeks | 3,000 |
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SIR870BDP-T1-RE3 | 3,347 |
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SIR870BDP-T1-RE3 | 6,000 | 6,000 |
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SIR870BDP-T1-RE3 | 6,000 | 21 Weeks | 6,000 |
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SIR870BDP-T1-RE3 | Cut Tape | 5,511 | 5 |
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SIR870BDP-T1-RE3 | 5,958 |
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SIR870BDP-T1-RE3 | Reel | 6,000 | 3,000 |
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SIR870BDP-T1-RE3 | 3,000 |
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SIR870BDP-T1-RE3 | 3,000 | 22 Weeks | 3,000 |
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SIR870BDP-T1-RE3 | 3,000 | 1 |
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SIR870BDP-T1-RE3 | 4,879 |
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SIR870 Datasheets (3)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
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SIR870ADP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A POWERPAK | Original | |||
SIR870BDP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 100V 18.8A/81A PPAK | Original | |||
SIR870DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A SO-8 | Original |
SIR870 Datasheets Context Search
Catalog Datasheet |
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PDF |
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Contextual Info: New Product SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 VDS (V) 100 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm |
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SiR870ADP 2002/95/EC SiR870ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S1209
Abstract: SIR870 SiR870ADP
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SiR870ADP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209 SIR870 | |
Contextual Info: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom |
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SiR870ADP SiR870ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm |
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SiR870DP SiR870DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom |
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SiR870ADP SiR870ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR870DP 2002/95/EC SiR870DP-T1-GE3 11-Mar-11 | |
Contextual Info: SPICE Device Model SiR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR870ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm |
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SiR870ADP 2002/95/EC SiR870ADP-T1-GE3 11-Mar-11 | |
SIR870Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR870DP 2002/95/EC SiR870DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR870 | |
SIR870
Abstract: PowerPAK SO-8
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SiR870ADP 2002/95/EC SiR870ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR870 PowerPAK SO-8 | |
Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm |
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SiR870DP SiR870DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR870DP 2002/95/EC SiR870DP-T1-GE3 18-Jul-08 | |
draloric potentiometers cermet 581
Abstract: WISTRON power sequence
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Original |
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Contextual Info: Vishay Intertechnology, Inc. Alternative Energy Energy Exploration One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy エネルギー探査 油層探鉱 4 採鉱 5 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6792-1304-AEEE | |
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Contextual Info: Vishay Intertechnology, Inc. Alternative Energy Energy Exploration One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy Energy Exploration Oil Prospecting 4 Mining 5 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6761-1212 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit |
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SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |