SI4909DY Search Results

Si4909DY

Contextual Info: SPICE Device Model Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Heat Trace

Abstract: SI4909DY 51A SO8 si4909
Contextual Info: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4909DY

Contextual Info: Si4909DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

LTC4417GN

Abstract: LTC3690 cvs3 power v1 v2 v3 uv1 uv2 uv3 valid1 valid2 valid3 LTC4417 LTC4417IUF Si4909DY FDS6675BNZ LTC4417HGN UV3 marking
Contextual Info: LTC4417 Prioritized PowerPath Controller Description Features Selects Highest Priority Supply from Three Inputs n Blocks Reverse and Cross Conduction Currents n Wide Operating Voltage Range: 2.5V to 36V n –42V Protection Against Reverse Battery Connection