LC3516AL-10
Abstract: LC3516A-10
Text: SANYO SEMICONDUCTOR - 3 B E C ORP D • 7 q ^ 7 Q 7b □□ 054 53 1 H9 CMOS DYNAMIC RAM Capacity Access Tim e Organization Words X Bits 1MX1 1M 256KX4 Type N o . T rac ns max L C 3 2 1 0 0 0 -1 0 /1 2 L C 3 2 1 0 0 0 J -1 0 /1 2 L C 3 2 10O O Z-1 0 /1 2
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SOJ26
S0J26
256KX4
LC3516A-10
LC3516A-12
LC3516AL-10
LC3516AL-12
LC3516AM-10
LC3516AM-12
MFP24
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bq785
Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Text: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and
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E2G0022-17-41
MSM5141
304-Word
MSM514100D/DL
a26/20-pin
20-pin
26/20-pin
bq785
20-P-300-1
MSM514100DL
ZIP20-P-400-1
msm514100d
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MSM6685
Abstract: MSM6685JS
Text: O K I Semiconductor MSM6685 8,388,608-Word x 1-Bit Serial Register GENERAL DESCRIPTION The MSM6685 is a serial register composed of 8,388,608 words x one bit, characterized by mediumspeed, low power consumption operation. This device has a built-in internal address generation circuit. Triggered off by a single external clock
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MSM6685
608-Word
MSM6685
SOJ26/20-P-300-1
S0J26/20-P-350-1
b72M24D
MSM6685JS
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MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
304-Word
MSM5117405B
26/24-pin
MSM5117405
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MSM511000
Abstract: ZIP20-P-400 dip26
Text: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is
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MSM511000B/BL
576-Word
MSM511000B/BL
18-pin
26/20-pin
20-pin
MSM511000BL
MSM511000
ZIP20-P-400
dip26
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MSM511000
Abstract: ZIP20-P-400 msm511000h
Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power
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MSM511000H_
576-Word
MSM511000H
18-pin
26/20-pin
20-pin
MSM511000
ZIP20-P-400
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MSM66V84B
Abstract: MSM66V84BJS MSM66V84BTS-K
Text: O K I Semiconductor MSM66V84B 4,194,304-word x 1-bit Serial Register GENERAL DESCRIPTION MSM66V84B is a serial register organized as 4,194,304 words x one bit, characterized by medium speed, low power consumption operation. This device has a built-in internal address generation circuit allowing continuous serial read / write
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MSM66V84B
304-word
MSM66V84B
26/20-pinATION
MSM66V84B,
MSM66V84BJS
MSM66V84BTS-K
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T02I
Abstract: 26-PIN ZIP20-P-400 514100B
Text: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.
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MSM514100B
MSM514100BL
304-Word
MSM514100B/BL
cycles/16ms,
cycles/128ms
2424G
T02I
26-PIN
ZIP20-P-400
514100B
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Untitled
Abstract: No abstract text available
Text: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC514410AP/AJ/ASJ/AZ
350mil)
TC51441OAP/AJ/ASJ/AZ-60
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Untitled
Abstract: No abstract text available
Text: TENTATIVE DATA 262,144 W O R D x 4 BIT D YN AM IC RAM DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynam ic R A M organized 262,144 words b y 4 bits. The TC514266AP/AJ/AZ utilizes T O S H IB A ’S C M O S Silicon gate process technology as w e ll as advanced
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TC514266AP/AJ/AZ
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 1,048,576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION T he T C 514410A P /A J/A SJ/A Z is the n e w g en e ra tio n dyn am ic R A M organized 1 ,0 4 8 ,5 7 6 words by 4 bits. T he T C 514410A P /A J/A SJ/A Z u tiliz es T O S H IB A ’S CM OS S ilico n gate process tech n ology as w e ll as
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14410A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
R1001B
D0177fiD
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a10u
Abstract: B724e
Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
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MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
a10u
B724e
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OF100
Abstract: MSM514256 MSM514256CL ZIP20-P-400 msm514256c
Text: O K I Sem iconductor MSIVI514256C /C L_ 262,144-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is
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MSIVI514256C/CL_
144-Word
MSM514256C/CL
20-pin
26/20-pin
MSM514256CL
OF100
MSM514256
MSM514256CL
ZIP20-P-400
msm514256c
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MSM514400C/CL-60
Abstract: No abstract text available
Text: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is
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MSM514400C/CL_
MSM514400C/CL
576-word
26/20-pin
20-pin
or26/20-pin
MSM514400CL
MSM514400C/CL-60
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.
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4402A/AL_
576-Word
MSM514402A/AL
576-w
cycles/16ms,
cycles/128ms
b7S424D
D0171Ã
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
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E2G0033-17-41
304-Word
MSM5116400B
/24-pin
cycles/64
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.
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MSM514256B/BL
144-Word
MSM514256B/BL
cycles/64ms
2424G
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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17405B_
E2G0039-17-41
304-Word
MSM5117405B
/24-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power
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17400B_
E2G0035-17-41
304-Word
MSM5117400B
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V4400/SL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE D ESC R IP T IO N The MSM51V4400/SL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit configuration. The technology used to fabricate the MSM51V4400/SL is OKI's CMOS silicon gate
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1V4400/SL_
576-Word
MSM51V4400/SL
576-w
MSM51V4400/SL
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.
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4400A/AL
576-Word
MSM514400A/AL
cycles/16ms,
cycles/128ms
MSM514400A/AL
b724240
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The
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MSM511002B
576-Word
MSM511002B
b7242HG
E4240
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m514400c
Abstract: 514400C
Text: O K I Semiconductor MSM514400C/CL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is
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MSM514400C/CL_
576-Word
MSM514400C/CL
26/20-pin
20-pin
or26/20-pin
MSM514400CL
m514400c
514400C
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