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    hs 111-0

    Abstract: MSM6052 MSM6352 DIP40-P-600 OKI
    Text: 5flE D OKI • b724EMG 0D13bflM flbb M O K I J semiconductor MSM6352 O K I SEMICONDUCTOR ”F-^9-¡9-y CROUP CMOS 4BIT SINGLE CHIP LOW POWER MICROCONTROLLER FOR TELEPHONE GENERAL DESCRIPTION The O KI M SM 6352 is a low-power, high-performance single-chip 4-bit microcontroller employing


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    PDF 24EM0 D013tià MSM6352 MSM6352 12-bits MSM6352, hs 111-0 MSM6052 DIP40-P-600 OKI

    mx232

    Abstract: YS2 100 a 741 j
    Text: 4bE D • b724E4Q HOKIJ O K I semiconductor MSC2328A-XX YS2/KS2 T - 262,144 BY 8 BIT DYNAMIC RAM MODULE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 w o rd sx8 bit CMOS dynamic random access memory composed of two 1Mb DRAMs in SOJ MSM514256AJS . The mounting of two SOJs


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    PDF b724E4Q MSC2328A-XX MSM514256AJS) MSM514256A RAM-MSC2328A-XXYS2/KS2" T-46-23-17 RAM-MSC2328A-XX mx232 YS2 100 a 741 j

    MSM5298A

    Abstract: MSM5298AGS l06S
    Text: O K I Semiconductor MSM5298A 68-DOT COMM ON DRIVER GENERAL DESCRIPTION T he MSM 5298AGS is a d o t m atrix LCD com m on d riv e r LSI w h ich is fabricated by lo w p o w e r C M O S m etal gate technology. T his LSI co n sists of 6 8 -bit b id irectio n al shift register, 6 8 -bit level


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    PDF MSM5298A 68-DOT MSM5298AGS 68-bit 68-output MSM5298AGSs MSM529V5 -18--20V MSM5298A l06S

    tone Dialer

    Abstract: DD221 MSM6234 MSM6234RS VMSM6234RS
    Text: O K I Semiconductor MSM6234 DTMF Tone Dialer LSI GENERAL DESCRIPTION TheMSM6234 is a tone dialer LSI which is fabricated by Oki's low power consumption CMOS silicon gate technology. TheMSM6234can generate 16DTMF Dual Tone Multi Frequency signals which consists of 4 higher


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    PDF MSM6234 TheMSM6234 MSM6234can 16-pin DIP16-P-300) MSM6234RS) b72M540 tone Dialer DD221 MSM6234 MSM6234RS VMSM6234RS

    MSM5116160

    Abstract: dq8e N4409
    Text: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er


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    PDF MSM5116160 576-Word 16-Bit MSM5116160 42-pin 50/44-pin dq8e N4409

    MSM7581

    Abstract: PAD10 PAD31 NC-641 M7581
    Text: O K I Semiconductor MSM7581_ ITU-T G.721 4ch ADPCM TRANSCODER G E N E R A L D ESC R IP T IO N The MSM7581 is an A D PC M tran sc o d er w h ich is u se d b y th e n ew dig ital cordless system . It converts 64 k b p s voice PCM serial d a ta to 32 k b p s ITU-T G.721 A D PC M serial d ata, a n d vice


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    PDF MSM7581 MSM7581 b724E4D b72424D PAD10 PAD31 NC-641 M7581

    optical switch 2x1

    Abstract: cd photo diode ocm240 Photo MOS Relay OCM200 OCM201 OCM220 OCM221 OCM241 201 photo
    Text: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS


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    PDF 10-mA L72454D 01ciDS4 b724E40 00nQ5S optical switch 2x1 cd photo diode ocm240 Photo MOS Relay OCM200 OCM201 OCM220 OCM221 OCM241 201 photo

    ic el 434

    Abstract: MSM5299A MSM6255 QFP100-P-1420-K QFP100-P-1420-V1K
    Text: O K I Sem icon d u cto r M SM 5299A 8O-DOT SEGMENT DRIVER G EN ER A L D ESCR IPTIO N T he M SM 5299A is a dot m atrix LC D segm ent d river LSI w hich is fabricated b y C M O S low pow er m etal gate technology. T his LSI con sists o f an 80-bit bid irectional shift register, 80-bit latch, 80b it level shifter and 80-bit 4-lev el driver.


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    PDF MSM5299A MSM5299A 80-bit 80bit TheMSM5299A MSM5299AGS ic el 434 MSM6255 QFP100-P-1420-K QFP100-P-1420-V1K

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.


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    PDF MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475

    MSM7540

    Abstract: MSM7560
    Text: O K I Semiconductor M SM 7540/7560 Single Rail ADPCM CODEC GENERAL DESCRIPTION The MSM7540 /7560 are single ch an n el A DPCM COD EC ICs w h ich p erfo rm m u tu a l tran sco d in g b etw een an alo g voice b a n d signal a n d 32 k b p s A DPCM serial data.


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    PDF MSM7540/MSM7560 MSM7540 oM7540/7560 b7245M0 MSM7560

    MSM5117400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.


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    PDF MSM5117400 304-Word MSM5117400 cycles/32ms capab40

    FML G02

    Abstract: m7555 VOICE SCRAMBLER jrc 317 tve mos 317 jrc compandor FT50 gto 2400-1.0 MSM7555GS-2K
    Text: O K I Semiconductor MSM7555 Single Chip MSK Modem with Compandor for Cordless Telephone GENERAL DESCRIPTION The N4SVI7353 is a single chip MSK modem with base band voice processor for cordless telephone. The MSM7555 voice transmit block consists of high pass filter, compressor, voice scrambler, pre­


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    PDF MSM7555 MSM7555 00222bfl FML G02 m7555 VOICE SCRAMBLER jrc 317 tve mos 317 jrc compandor FT50 gto 2400-1.0 MSM7555GS-2K

    MSM5116400C

    Abstract: No abstract text available
    Text: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS


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    PDF E2G0106-18-42 MSM5116400C_ 304-Word MSM5116400C 26/24-pin

    active suspension

    Abstract: m56v16 m56v1640010
    Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


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    PDF MSM56V16400_ 152-Word MSM56V16400 cycles/64 b7E424G DD2Q377 active suspension m56v16 m56v1640010

    LMN 317

    Abstract: BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090
    Text: O K I Semiconductor MSM6895/6896 M u lti-F u n ctio n P C M C O D E C G E N E R A L D ESC R IP T IO N The MSM6895/MSM6896, developed especially for low -pow er an d m ulti-function applications in ISDN telephone term inals, are single +5 V pow er supply CODEC LSI devices. The devices


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    PDF MSM6895/MSM6896 MSM6895/MSM6896, 002157b LMN 317 BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090

    bi-directional switches FET

    Abstract: til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241
    Text: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay G EN ER A L D E S C R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS


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    PDF 10-mA L72454D 01ciDS4 b724E40 bi-directional switches FET til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241

    256kx16 ucas zip

    Abstract: No abstract text available
    Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance


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    PDF MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 245MG 256kx16 ucas zip

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S


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    PDF MSM38S0000/MSM98S000 MSM38S MSM98S 16-Mbit 38S/98S 44x44 35x35 28x28 33x33 38x38

    a10u

    Abstract: B724e
    Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.


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    PDF MSM514101B/BL 304-Word MSM514101B/BL 1024cycles/16ms, 128ms a10u B724e

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OCM 4X8 SERIES Dual-Channel, Bidirectional Optical M O S Relay with Tw o Channels GENERAL DESCRIPTION The OCM4X8 Series are dual-channel, bidirectional AC optical MOS relays. The device is available in the same form factor as single-channel devices, with 8-pin DIP and F-type (gull w ing) package.


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    PDF 72424D L7S4240

    D015

    Abstract: MSC2328B-10YS2 MSC2328B-60YS2 MSC2328B-70YS2 MSC2328B-80YS2
    Text: O K I Semiconductor MSC2328B-XXYS2 262,144-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2328B-xxYS2 is a fully decoded 262/144-word x 8-bit CM OS Dynamic Random Access M em­ ory Module composed of two 1-Mb DRAMs in SOJ M SM514256B packages mounted with two 0.2 |iF


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    PDF MSC2328B-xxYS2 144-Word MSC2328B-xxYS2 MSM514256B) 30-pin 60thin D015 MSC2328B-10YS2 MSC2328B-60YS2 MSC2328B-70YS2 MSC2328B-80YS2

    MSM6351

    Abstract: QFP100-P-1420-K SEG60 hz-02 IRQP20 OKI msm6351
    Text: 5ÔE D • b ? 2 4 2 4 G Q D 1 3 b ? E 044 « O K I J OKI semiconductor \-^9-13-^4 MSM6351 O K I S E M I C O N D U C T O R GROUP CMOS 4-BIT HIGH PERFORMANCE AND VERY LOW POWER SINGLE CHIP MICROCONTROLLER WITH LCD DRIVER GENERAL DESCRIPTION O K I’s M S M 6 3 5 1 is a low -pow er, h ig h -p erfo rm an ce sin gle-ch ip m icrocontroller em ploying silicon


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    PDF b7E4240 MSM6351 QFP100-P-1420-K SEG60 hz-02 IRQP20 OKI msm6351

    MSM5117180-70

    Abstract: MSM5117180-80
    Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms MSM5117180-70 MSM5117180-80

    m6376

    Abstract: oki m6376 msm6376 J3E diode oki msm6376 oki voice synthesizer msm6375 diode i0-i6 7b424 oscV16 ADPCM SPEECH SYNTHESIZER LSIs
    Text: O K I Semiconductor MSM6376_ A D P C M S P EE C H S Y N TH E S IZE R W ITH EXTERNAL R O M G ENER AL D ES C R IP TIO N MSM6376 is a tw o-channel m ixing ADPCM speech synthesizer LSI using u p to 16 M-bit external speech data storage, such as ROM,


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    PDF MSM6376_ MSM6376 12-bit MSM6372, MSM6373, MSM6374, MSM6375, MSM6376 m6376 oki m6376 J3E diode oki msm6376 oki voice synthesizer msm6375 diode i0-i6 7b424 oscV16 ADPCM SPEECH SYNTHESIZER LSIs