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    Untitled

    Abstract: No abstract text available
    Text: SOJ26-P-300-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.83 TYP. 1/Mar. 21, 2000


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    SOJ26-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 26P0J-B Weight g Lead Material Alloy 42 e b2 14 e1 19 HE 21 E 26 e1 c D Recommended Mount Pad Symbol 1 6 13 8 L A A1 b1 e y I2 JEDEC Code – I1 EIAJ Package Code SOJ26/24-P-300-1.27 Plastic 26pin 300mil SOJ b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2


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    26P0J-B SOJ26/24-P-300-1 26pin 300mil PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/24-P-300-1.27-3 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 0.80 TYP. 5 版/96.12.5


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    SOJ26/24-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 26P0D-B JEDEC Code – Weight g Lead Material Alloy 42 b2 I1 e e1 HE 14 19 21 E 26 e1 c D Recommended Mount Pad Symbol 1 8 6 13 L A A1 b1 e y I2 EIAJ Package Code SOJ26/24-P-300-1.27 Plastic 26pin 300mil SOJ(LOC) b SEATING PLANE A A1 b b1 c D E e e1 HE L


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    26P0D-B SOJ26/24-P-300-1 26pin 300mil PDF

    SOJ26

    Abstract: No abstract text available
    Text: SOJ26/20-P-350-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.01 TYP. 5 版/96.12.5


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    SOJ26/20-P-350-1 SOJ26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/24-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 0.80 TYP. 5 版/96.12.5


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    SOJ26/24-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ(≥5µm) 0.83 TYP. 1 版/00.3.21


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    SOJ26-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/20-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 0.80 TYP. 5 版/96.12.5


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    SOJ26/20-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/24-P-300-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.


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    SOJ26/24-P-300-1 PDF

    SOJ26

    Abstract: No abstract text available
    Text: SOJ26/24-P-300-1.27-3 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.


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    SOJ26/24-P-300-1 SOJ26 PDF

    20-P-350

    Abstract: No abstract text available
    Text: SOJ26/20-P-350-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.


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    SOJ26/20-P-350-1 20-P-350 PDF

    26P0J

    Abstract: No abstract text available
    Text: 26P0J Plastic 26pin 300mil SOJ EIAJ Package Code SOJ26/20-P-300-1.27 JEDEC Code – Weight g 0.75 Lead Material Alloy 42 e b2 c e1 HE 14 18 22 E 26 e1 I1 I2 D Recommended Mount Pad Symbol 1 9 5 13 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y


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    26P0J 26pin 300mil SOJ26/20-P-300-1 26P0J PDF

    SOJ26

    Abstract: No abstract text available
    Text: SOJ26/20-P-300-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.


    Original
    SOJ26/20-P-300-1 SOJ26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/20-P-350-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.01 TYP. 5/Dec. 5, 1996


    Original
    SOJ26/20-P-350-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/24-P-300-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.80 TYP. 5/Dec. 5, 1996


    Original
    SOJ26/24-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOJ26/20-P-300-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.80 TYP. 5/Dec. 5, 1996


    Original
    SOJ26/20-P-300-1 PDF

    4A04I

    Abstract: tc514100a
    Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan
    TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan
    TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10 PDF

    TC5116400

    Abstract: tc5116400csj 300D1 toshiba RAS-25
    Text: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M


    OCR Scan
    TC5116400CSJ/CST 300mil) 400CSJ/C TC5116400 CSJ/CST-40 CSJ/CST-50 tc5116400csj 300D1 toshiba RAS-25 PDF

    TC51V16405

    Abstract: TC51V16405c
    Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The


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    TCS1V1c405 TC51V16405CSJS/CSTS 300mil) TCS1V16405 TC51V16405 SOJ26 TSOP26 TC51V16405c PDF

    A100COLUMN

    Abstract: No abstract text available
    Text: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan
    TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 A100COLUMN PDF

    tc51100ap

    Abstract: DIP18-P-300E TC514100
    Text: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan
    TC514100AF/AJ/ASJ/AZ TC514100AP/AJ/ASJ/AZ 300/350mil) TC514100AP/AJ/ASJ/AZ. TC5141 TC514100AP/AJ/ASJ/AZ-80 tc51100ap DIP18-P-300E TC514100 PDF

    TC514100

    Abstract: 514100A
    Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan
    --------------TC514100ASJ/AZ/AFT-60/70/80 TC514100A TC514410ASJ/AZ/AFT 300mil) TC51400/ASJ/A27AFT. TC514100 514100A PDF

    KSR128

    Abstract: a95x A348 20 pin
    Text: TC514400ÂPL/ÂJL/ASJL/AZL-60 * This is advanced information and specifica­ tions are subject to change without notice. 1,048,576 W ORD x 4 BIT D YN A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by


    OCR Scan
    TC514400 JL/ASJL/AZL-60 TC514400APL/AJL/ASJL/AZL 300/350mil) TC514400APL/AJL/ASJL/AZL. a512K TC514400APL/AJL/ASJL/AZL-60 KSR128 a95x A348 20 pin PDF