Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM531622C 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit M ask ROM DESCRIPTION The OKI MSM531622C is a high-speed CMOS Mask ROM that can electrically switch between 1,048,576word x 16-bit or 2,097,152-word x 8-bit configurations. The MSM531622C operates on a single 5.0 V power
|
OCR Scan
|
PDF
|
MSM531622C
576-Word
16-Bit
152-Word
MSM531622C
576word
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The
|
OCR Scan
|
PDF
|
MSM511002B
576-Word
MSM511002B
b7242HG
E4240
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V4 1 OO/L/SL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4100/L /SL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V4100/L/SL achieves high integration, high-speed operation, and
|
OCR Scan
|
PDF
|
MSM51V41OO/L/SL
304-Word
MSM51V4100/L
MSM51V4100/L/SL
MSM51V4100/L/
26/20-pin
MSM51V4100L
MSM51V4100SL
|
doc-70
Abstract: c431a
Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since
|
OCR Scan
|
PDF
|
MSM27C431AZB
288-Word
MSM27C431AZB
7Cf31
MSM27-
C431AZB
32-pin
MSM27C421ZB)
doc-70
c431a
|