MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
4402A/AL_
576-Word
MSM514402A/AL
576-w
cycles/16ms,
cycles/128ms
b7S424D
D0171Ã
|
26-PIN
Abstract: MSM514 ZIP20-P-400
Text: O K I Semiconductor MSM514101 B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
A0-A10
26-PIN
MSM514
ZIP20-P-400
|
e33a
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM51V17190
576-Word
18-Bit
MSM51V17190
2048cycles/32m
e33a
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514170A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514170A/ASLachieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is
|
OCR Scan
|
PDF
|
MSM514170A/ASL
144-Word
16-Bit
MSM514170A/ASL
MSM514170A/ASLachieves
40-pin
|
d92-d2
Abstract: 7-Segment Display Driver with Decoder
Text: 5ÔE J> m b72424D 0D145fl5 7CH « O K I J O K I semiconductor -t-sz-is-a>? M S C 1 1 7 8 /M S C 1 1 7 9 K 1 s e h i c o n i >u c t o k ¿ roup 7-SEGMENT DRIVER GENERAL DESCRIPTION The MSC1178/79 is a BiCMOS structure static display driver to directly drive a
|
OCR Scan
|
PDF
|
b72424D
0D145fl5
MSC1178/79
56-pin
35-bit
51ki2,
047jiF
d92-d2
7-Segment Display Driver with Decoder
|
D08-15
Abstract: No abstract text available
Text: Preliminary OKI Semiconductor MSM5 4 3 2 1 2 8 _ 131,072 -Word x 32 Bit DYNAMIC RAM : HYPER PAGE MODE TYPE DESCRIPTION The MSM5432128 is a new generation Graphic DRAM organized in 131,072-word by 32-bit configuration. The technology used to fabricate the MSM5432128 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM5432128
072-word
32-bit
64-pin
SSOP64-P-525/Q
MSM54321ndustrial
D08-15
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM514
576-Word
MSM514410A/AL
576-w
MSM514400A/AL
cycles/16ms,
cycles/128ms
b724240
MSM51441OA/AL
|
m51171
Abstract: m32AG M5116
Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM5116180
576-Word
18-Bit
MSM5116180
cycles/64ms
m51171
m32AG
M5116
|
ST 7567 S
Abstract: d02144
Text: O K I Semiconductor MSM7566/7567 Single Rail CODEC G EN ERA L DESCRIPTION The MSM7566 and MSM7567 are single-channel CODEC CMOS ICs for voice signals ranging from 300 to 3400 Hz. These devices contain filter for A /D and D /A conversion. Designed especially for a single-power supply and low-power applications, these devices are
|
OCR Scan
|
PDF
|
MSM7566/7567
MSM7566
MSM7567
MSM7508B
MSM7509B.
b724240
ST 7567 S
d02144
|
S82V16520
Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
Text: E2L0056-28-91 % This version: Sep. 1998 O K I Semiconductor M S82V16 5 2 0 2 62 ,14 4 -W o rd x 3 2 -B it x 2 -B a n k Synchronous G raphics R AM D E S C R IP TIO N The MS82V16520 is a synchronous graphics random access m em ory organized as 256 K w o r d s x 3 2
|
OCR Scan
|
PDF
|
E2L0056-28-91
MS82V16520
MS82V16520
72424G
DD275Qti
S82V16520
533 BA
QFP100-P-1420-0
AX2002
S82V
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.
|
OCR Scan
|
PDF
|
MSM56
V16160
288-Word
16-Bit
MSM56V16160
cles/64
|
514400
Abstract: No abstract text available
Text: O K I Semiconductor MSM514400 B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynamic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the M SM 514400B/BL is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM514400
576-Word
514400B/BL
576-w
1024cycles/16m
1024cycles/128m
MSM514400B/BL
b7E4540
514400
|
MSM5259GS-K
Abstract: 2311B MSM5259 MSM5259GS-2K MSM5259GS-2L2 MSM5259GS-L2 tb320-7 msm6222-xx
Text: O K I Semiconductor MSM5259 4 0 -D O T S E G M E N T D R IV E R GENERAL DESCRIPTION The MSM5259 is a dot m atrix LCD segm ent driver which is fabricated by low pow er CMOS metal gate technology. This LSI consists of 40-bit shift register two 20-bit shift registers , 40-bit latch
|
OCR Scan
|
PDF
|
MSM5259_
40-DQT
MSM5259
40-bit
20-bit
MSM5259GS-K
2311B
MSM5259GS-2K
MSM5259GS-2L2
MSM5259GS-L2
tb320-7
msm6222-xx
|
|
|