MSM6685
Abstract: MSM6685JS
Text: O K I Semiconductor MSM6685 8,388,608-Word x 1-Bit Serial Register GENERAL DESCRIPTION The MSM6685 is a serial register composed of 8,388,608 words x one bit, characterized by mediumspeed, low power consumption operation. This device has a built-in internal address generation circuit. Triggered off by a single external clock
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MSM6685
608-Word
MSM6685
SOJ26/20-P-300-1
S0J26/20-P-350-1
b72M24D
MSM6685JS
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
capab40
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FML G02
Abstract: m7555 VOICE SCRAMBLER jrc 317 tve mos 317 jrc compandor FT50 gto 2400-1.0 MSM7555GS-2K
Text: O K I Semiconductor MSM7555 Single Chip MSK Modem with Compandor for Cordless Telephone GENERAL DESCRIPTION The N4SVI7353 is a single chip MSK modem with base band voice processor for cordless telephone. The MSM7555 voice transmit block consists of high pass filter, compressor, voice scrambler, pre
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MSM7555
MSM7555
00222bfl
FML G02
m7555
VOICE SCRAMBLER
jrc 317
tve mos
317 jrc
compandor
FT50
gto 2400-1.0
MSM7555GS-2K
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PNPN
Abstract: TRansistor A 940 OCS31
Text: OKI electronic com ponents OCS31 Optical PNPN Switches GENERAL DESCRIPTION The OCS31 is an optical switch formed by combining a GaAs infrared light emitting diode and a silicon PNPN element that can withstand high voltages. Encased in an 8-pin plastic package, the
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OCS31_
OCS31
E86831
b7E4240
OCS31
PNPN
TRansistor A 940
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MSM64153A
Abstract: MSM64P155 SEG23
Text: O K I Semiconductor MSM6 4 153A/6 4 153AL Built-in Melody Circuit and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64153A 1.5 V /64153A L (3.0 V) is a 4-bit microcontroller that incorporates an nX-4/20 CPU core. The MSM64153A family offers a built-in 160-nibble data memory, 3-Kbyte program
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MSM64153A
MSM64153AL
MSM64153A
/64153A
nX-4/20
160-nibble
B724240
MSM64153A/64153AL
MSM64P155
SEG23
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23CV132SL-xxBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23CV132SL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages
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MSC23CV132SL-xxBS8
576-Word
32-Bit
MSC23CV132SL-xxBS8
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
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1X3 diode
Abstract: 04ti
Text: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The
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10-mA
b72424D
24E4G
L7E4240
1X3 diode
04ti
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FST 460 TRANSISTOR
Abstract: m5205 oki MSM6258 FST 460 KBR 6.0 MSM6258V QFP44-P-910-V1K Transistor FST 460 4813b MSM6258VJS
Text: O K I Semiconductor ISM6258/MSM6258V ADPCM SPEECH PROCESSOR FOR SOLID STATE RECORDER TO CUSTOMERS FOR NEW CIRCUIT DESIGN For a new circuit design, i t is recom m ended to use not the MSM6258, b u t the M SM6388/ MSM6588 as described later. The MSM6258 has an 8-bit AD converter and
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ISM6258/MSM6258V
MSM6258,
MSM6388/
MSM6588
MSM6258
MSM6388/MSM6588
12-bit
MSM6388
FST 460 TRANSISTOR
m5205 oki
FST 460
KBR 6.0
MSM6258V
QFP44-P-910-V1K
Transistor FST 460
4813b
MSM6258VJS
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MSC7162
Abstract: transistor bipolar driver schematic
Text: OKi bemiconauctor -t-szhs-w SflE T> m b72ME4G 0 0 m S 2 A TM3 • OKI J M S C 7 1 6 2 O K I SEMI CONDUCTOR GROUP 40-BIT ANODE/GRID DRIVER GEN ERAL DESCRIPTION The MSC7162 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip.
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00mS2fl
40-BIT
MSC7162
MSC7162
b72M240
001453b
transistor bipolar driver schematic
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
Bv 42 transistor
tsop50
42-PIN
MSM5116190-70
MSM5116190-80
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oki m6688
Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
Text: OKI Semiconductor MSM6688 ADPCM SOLID-STATE RECORDER LSI • GENERAL DESCRIPTION The M S M 6688 is a “solid-state-recorder” LSI developed using the ADPCM method. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM through the
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MSM6688
MSM6688
MSM6791
M6688
XXX-96Q9INSIAI
XXX-96S9IAISIAI
b72424D
oki m6688
M6688
SHARP IC 701 I X11
voice activated recorder circuit
evo cn GP 502
op amp ua 743
VOICE REC playback
VOICE RECORDER and playback IC
MSM6595
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Untitled
Abstract: No abstract text available
Text: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.
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b72M2MD
MSM514256A
144-WORD
MSM514256A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23441A-xxBS 10/DS10 4,194,304-Word x 40-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23441A-xxBSlO/DSlO is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs 4M x 4 in SOJ packages
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MSC23441A-xxBS
10/DS10
304-Word
40-Bit
MSC23441A-xxBSlO/DSlO
16-Mb
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23B1321A-XXBS2/DS2 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B1321 A-xxBS2/DS2 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of two 16-Mb DRAMs 1M x 16 in SOJ packages
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MSC23B1321A-XXBS2/DS2
576-Word
32-Bit
MSC23B1321
16-Mb
72-pin
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MSM514260
Abstract: SM5142
Text: • O K I S em iconductor MSM5 14 2 6 0 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514260B /BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. ITie MSM514260B/BSL is
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MSM514260B/BSL
144-Word
16-Bit
MSM514260B/BSL
40-pin
MSM514260BSL
MSM514260
SM5142
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HA13A2
Abstract: MSM534032B 534022
Text: O K I Semiconductor MSM534032B 262,144-Word x 16-Bit or 524,288-Word x 8-Bit Low-Voltage Mask ROM- DESCRIPTION In 6 h° KI! ooy Vnt s J - a high' speed CMOS Mask ROM that can electrically switch between 262 144° rd X t blt confi§urati°n s. The MSM534032B operates on a single 3.0 V or
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MSM534032B
144-Word
16-Bit
288-Word
534022C
b724240
DD21D41
HA13A2
534022
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BT 151 PIN DIAGRAM
Abstract: MK31VT872A MK31VT872A-8YC
Text: M K31VT872A-8YC 98.06.26 O K I iSem ¡conductor M K 3 1 V T 8 7 2 A -8YC 8,388,608 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK): DESCRIPTION The Oki MK31VT872A-8YC is a fully decoded, 8,388,608 x 72bit synchronous dynamic random access memory composed of eight 64Mb DRAMs(8Mx9) in TSOP packages
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MK31VT872A-8YC
K31VT872A-8YC_
MK31VT872A-8YC
72bit
168-pin
72-Bit
b724E40
D0E711E
BT 151 PIN DIAGRAM
MK31VT872A
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K242M
Abstract: l75h MSM54V16255A
Text: PRELIMINARY OK! Semiconductor REVISION-2 1996.11.2 M S M 5 4 V 1 6 2 5 5 A / S L ~~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM54V162S5A/SL is a 262,144-word x 16-bit dynamic R A M fabricated in OKI's CM O S silicon gate technology. The MSM54V16255A/SL achieves high integration,high-speed operation,and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM54V16255A/SL is
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MSM54V16255A/SL
144-Word
16-Blt
MSM54V162S5A/SL
16-bit
MSM54V16255A/SL
40-pin
14/40-pin
K242M
l75h
MSM54V16255A
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com 2X5
Abstract: No abstract text available
Text: O K I electronic components OCM 2X4, 2X5 SERIES Bidirectional Optical M O S Relay G E N E R A L D E S C R IP T IO N The OCM2X4 and OCM2X5 Series are bidirectional AC optical MOS relays that provide high speed response and are capable of handling high-frequency signals. The input portion is a GaAs
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10-mA
OCM204/205
b72M2M0
Cf1/1244/2
b72M24D
com 2X5
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSM6234 DTMF Tone Dialer LSI G EN ER A L D ESCRIPTIO N The MSM6234 is a tone dialer LSI which is fabricated by Oki's low power consumption CMOS silicon gate technology. The MSM6234can generate 16 DTMF Dual Tone Multi Frequency signals which consists of 4 higher
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MSM6234
MSM6234
MSM6234can
16-pin
DIP16-P-300)
MSM6234RS)
00B21A4
b724240
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S4-6V
Abstract: 26-PIN
Text: O K I Semiconductor MSM5 1V4 10 O/SL 4,194,304-W ord x 1-Bit D Y N A M IC R A M DESCRIPTION The MSM51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate
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MSM51V4100/SL
304-Word
MSM51V4100/SL
1024cycles/16ms,
128ms
b724240
S4-6V
26-PIN
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OCS33 Optical PNPN Switches G EN ER A L D ESCRIPTIO N The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS33
OCS33
/01HS
2424G
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6685 8,388,608-Word x 1-Bit Serial Register GENERAL DESCRIPTION The MSM6685 is a serial register composed of 8,388,608 words x one bit, characterized by mediumspeed, low power consumption operation. This device has a built-in internal address generation circuit. Triggered off by a single external clock
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MSM6685
608-Word
MSM6685
SOJ26/20-P-300-1
S0J26/20-P-350-1
b72M24D
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