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    S09001 Price and Stock

    Amphenol Communications Solutions G17S0900110EU

    CONN D-SUB RCPT 9POS SLDR CUP
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    DigiKey G17S0900110EU Tray 1,264 1
    • 1 $1.06
    • 10 $0.896
    • 100 $0.8044
    • 1000 $0.58499
    • 10000 $0.53015
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    Newark G17S0900110EU Bulk 1,997 1
    • 1 $1
    • 10 $0.687
    • 100 $0.606
    • 1000 $0.594
    • 10000 $0.594
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    TME G17S0900110EU 1
    • 1 $0.974
    • 10 $0.677
    • 100 $0.527
    • 1000 $0.527
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    Chip1Stop G17S0900110EU 2,274
    • 1 $0.909
    • 10 $0.649
    • 100 $0.574
    • 1000 $0.574
    • 10000 $0.574
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    Master Electronics G17S0900110EU 2,725
    • 1 -
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    • 100 $0.7432
    • 1000 $0.4569
    • 10000 $0.4284
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    Amphenol Corporation G17S 0900 110 EU

    Conn D-Subminiature RCP 9 POS 2.77mm Solder Pot ST Panel Mount 9 Terminal 1 Port - Bulk (Alt: 96K5471)
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    Avnet Americas G17S 0900 110 EU Bulk 17 Weeks, 3 Days 1
    • 1 $1
    • 10 $0.687
    • 100 $0.606
    • 1000 $0.606
    • 10000 $0.606
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    G17S 0900 110 EU Tray 12 Weeks 2,000
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    Amphenol Corporation G17S0900110EU

    D-Sub Standard Connectors 9S RECPT SOLDER CUP FIXED PRECISION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G17S0900110EU 4,464
    • 1 $1
    • 10 $0.688
    • 100 $0.579
    • 1000 $0.518
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    Bristol Electronics G17S0900110EU 10
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    TTI G17S0900110EU Tray 2,800 50
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    • 100 $0.494
    • 1000 $0.466
    • 10000 $0.448
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    Avnet Abacus G17S0900110EU 2,000 23 Weeks 2,000
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    New Advantage Corporation G17S0900110EU 1,600 1
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    • 1000 $0.5571
    • 10000 $0.52
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    The Bergquist Company SP900S-0.009-00-1212

    Thermal Interface Products Insulator, Low-Pressure, 12"x12" Sheet, 0.009" Thickness, Sil-Pad TSP1600S/900S
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    Mouser Electronics SP900S-0.009-00-1212 542
    • 1 $46.27
    • 10 $43.55
    • 100 $38.11
    • 1000 $38.11
    • 10000 $38.11
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    Samtec Inc HCSD-07-S-09.00-01-N-ST4

    Ribbon Cables / IDC Cables IDC Socket and Terminal Cable Assemblies, 0.100" Pitch
    Free Sample
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    Mouser Electronics HCSD-07-S-09.00-01-N-ST4
    • 1 $8.42
    • 10 $7.78
    • 100 $5.8
    • 1000 $4.51
    • 10000 $3.65
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    Find more S09001 price and stock on Findchips.com

    S09001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance


    Original     		PDF IRFI9620G, SiHFI9620G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFB18N50KPbF

    Abstract: IRFB18N50K SiHFB18N50K SiHFB18N50K-E3
    Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB18N50K, SiHFB18N50K O-220 18-Jul-08 IRFB18N50KPbF IRFB18N50K SiHFB18N50K-E3

    SiHF9530S-E3

    Abstract: IRF9530S SiHF9530S IRF9530STRRPBF
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel


    Original     		PDF IRF9530S, SiHF9530S O-263) 18-Jul-08 SiHF9530S-E3 IRF9530S IRF9530STRRPBF

    IRF9510

    Abstract: No abstract text available
    Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9510, SiHF9510 O-220 O-220 18-Jul-08 IRF9510

    SiHFI830G

    Abstract: IRFI830G SiHFI830G-E3
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 11-Mar-11 IRFI830G SiHFI830G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI520G, SiHFI520G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration RoHS • For Automatic Insertion


    Original     		PDF IRFD320, SiHFD320 18-Jul-08

    SiHFD420

    Abstract: No abstract text available
    Text: IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 500 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD420, SiHFD420 18-Jul-08

    CQFN

    Abstract: pressure sensor instrumentation amplifier circuit SG0614 SG0611
    Text: PRODUCT HIGHLIGHT High Temperature Sensor Amplifier Module Designing a high temperature system SGA designs and produces integrated approach that creates a very small instru- is not only a matter of finding the right circuits for high temperature conditions.


    Original     		PDF SG0611 CQFN-20 S-09-001-A SE-587 CQFN pressure sensor instrumentation amplifier circuit SG0614

    IRFI744G

    Abstract: SiHFI744G SiHFI744G-E3 mosfet 740 IRFI744
    Text: IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI744G, SiHFI744G O-220 18-Jul-08 IRFI744G SiHFI744G-E3 mosfet 740 IRFI744

    Untitled

    Abstract: No abstract text available
    Text: IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)


    Original     		PDF IRFI740GLC, SiHFI740GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHFI9640G

    Abstract: No abstract text available
    Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI9610G, SiHFI9610G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFI9640G

    SiHFI634G

    Abstract: No abstract text available
    Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI634G, SiHFI634G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHFI640G

    Abstract: No abstract text available
    Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI640G, SiHFI640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI730G, SiHFI730G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHFI9640G

    Abstract: No abstract text available
    Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI9640G, SiHFI9640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		PDF IRFI520G, SiHFI520G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI720G, SiHFI720G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHFI830G

    Abstract: No abstract text available
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFIBC30G, SiHFIBC30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHFIZ44G

    Abstract: No abstract text available
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFI640G

    Abstract: IRFI640 SiHFI640G
    Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI640G, SiHFI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI640G IRFI640

    IRFI720G

    Abstract: SiHFI720G SiHFI720G-E3
    Text: IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI720G, SiHFI720G O-220 11-Mar-11 IRFI720G SiHFI720G-E3

    IS09001

    Abstract: H-33 H-35 ITR8307 h33 diode
    Text: eVERJLIGKT S09001 QS9000 APPROVED Subminiature High Sensitivity Photo Interrupter ITR8307 Features: ITR: • FAST RESPONSE TIME. • HIGHLY ANALYTICAL • CUTTING WAVELENGTH A.p=840nm. • THIN. • COMPACT. Package Dimensions: LO <=> Cc\iO ^ -!- 1-1


    OCR Scan     		PDF IS09001 QS9000 ITR8307 840nm. ITR8307 CO307 Ta-25Â H-33 H-35 h33 diode