IRFI744G
Abstract: SiHFI744G SiHFI744G-E3 mosfet 740 IRFI744
Text: IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI744G,
SiHFI744G
O-220
18-Jul-08
IRFI744G
SiHFI744G-E3
mosfet 740
IRFI744
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Untitled
Abstract: No abstract text available
Text: IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI744G,
SiHFI744G
O-220
12-Mar-07
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IRFI744G
Abstract: SiHFI744G SiHFI744G-E3 IRFI744
Text: IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI744G,
SiHFI744G
O-220
18-Jul-08
IRFI744G
SiHFI744G-E3
IRFI744
|