Untitled
Abstract: No abstract text available
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
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PDF
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IRFI9620G,
SiHFI9620G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
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PDF
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IRFI9620G,
SiHFI9620G
O-220
12-Mar-07
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IRFI9620G
Abstract: SiHFI9620G SiHFI9620G-E3
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
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PDF
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IRFI9620G,
SiHFI9620G
O-220
18-Jul-08
IRFI9620G
SiHFI9620G-E3
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pj-25 diode
Abstract: No abstract text available
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
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PDF
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IRFI9620G,
SiHFI9620G
O-220
11-Mar-11
pj-25 diode
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Untitled
Abstract: No abstract text available
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
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PDF
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IRFI9620G,
SiHFI9620G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AN609
Abstract: IRFI9620G SiHFI9620G
Text: IRFI9620G_RC, SiHFI9620G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFI9620G
SiHFI9620G
AN609,
11-May-10
AN609
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irfi9620
Abstract: IRFI9620G SiHFI9620G SiHFI9620G-E3
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
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PDF
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IRFI9620G,
SiHFI9620G
O-220
18-Jul-08
irfi9620
IRFI9620G
SiHFI9620G-E3
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Untitled
Abstract: No abstract text available
Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance
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Original
|
PDF
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IRFI9620G,
SiHFI9620G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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