SiHFI640G
Abstract: No abstract text available
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFI640G
Abstract: IRFI640 SiHFI640G
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFI640G
IRFI640
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SiHFI640G
Abstract: IRFI640G SiHFI640G-E3
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
11-Mar-11
IRFI640G
SiHFI640G-E3
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SiHFI640G
Abstract: No abstract text available
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFI640G
Abstract: IRFI640G_RC, SiHFI640G_RC transistor c 6093 IRFI640 SIHFI640G AN609 90446
Text: IRFI640G_RC, SiHFI640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRFI640G
SiHFI640G
AN609,
06-May-10
IRFI640G_RC, SiHFI640G_RC
transistor c 6093
IRFI640
AN609
90446
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IRFI640G
Abstract: SiHFI640G SiHFI640G-E3 59AB
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
18-Jul-08
IRFI640G
SiHFI640G-E3
59AB
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59AB
Abstract: SiHFI640G SiHFI640G-E3 IRFI640G irfi640gpbf
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
18-Jul-08
59AB
SiHFI640G-E3
IRFI640G
irfi640gpbf
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SiHFI640G
Abstract: No abstract text available
Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI640G,
SiHFI640G
O-220
12-Mar-07
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