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IRFB18N50KPbF Abstract: IRFB18N50K SiHFB18N50K SiHFB18N50K-E3 Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 18-Jul-08 IRFB18N50KPbF IRFB18N50K SiHFB18N50K-E3	PDF
S8056 Abstract: No abstract text available Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 O-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50Kmerchantability, 12-Mar-07 S8056	PDF
irfb18n50k Abstract: No abstract text available Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 O-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50Ktrademarks 2011/65/EU 2002/95/EC. 2002/95/EC irfb18n50k	PDF
AN609 Abstract: IRFB18N50K SiHFB18N50K Text: IRFB18N50K_RC, SiHFB18N50K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFB18N50K SiHFB18N50K AN609, 16-Apr-10 AN609	PDF
Untitled Abstract: No abstract text available Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiHFB18N50K Abstract: SiHFB18N50K-E3 IRFB18N50K Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 18-Jul-08 SiHFB18N50K-E3 IRFB18N50K	PDF
Untitled Abstract: No abstract text available Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 O-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50Khay 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB18N50K, SiHFB18N50K O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF