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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 12-Mar-07	PDF
IRFI9620G Abstract: SiHFI9620G SiHFI9620G-E3 Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 18-Jul-08 IRFI9620G SiHFI9620G-E3	PDF
pj-25 diode Abstract: No abstract text available Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 11-Mar-11 pj-25 diode	PDF
Untitled Abstract: No abstract text available Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: IRFI9620G SiHFI9620G Text: IRFI9620G_RC, SiHFI9620G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFI9620G SiHFI9620G AN609, 11-May-10 AN609	PDF
irfi9620 Abstract: IRFI9620G SiHFI9620G SiHFI9620G-E3 Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 18-Jul-08 irfi9620 IRFI9620G SiHFI9620G-E3	PDF
Untitled Abstract: No abstract text available Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	IRFI9620G, SiHFI9620G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF