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Catalog Datasheet	MFG & Type	PDF	Document Tags
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)
J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A
transistor j210 Abstract: 100B1R0BW J283 AGR09030E AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp Text: AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E AGR09030EU AGR09030EF transistor j210 100B1R0BW J283 AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS04-025RFPP DS02-218RFPP)
AGR09030E Abstract: AGR09030EF AGR09030EU JESD22-C101A J02-1 Text: Preliminary Data Sheet April 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E DS04-149RFPP DS04-025RFPP) AGR09030EF AGR09030EU JESD22-C101A J02-1
JESD22-C101A Abstract: AGR09060GF AGR09060GU 06F150 Text: Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09060G Hz--895 AGR09060G DS02-022RFPP JESD22-C101A AGR09060GF AGR09060GU 06F150
RK73H2A10R0F Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J Text: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09060GUM Hz--895 AGR09060GUM m8109-9138 DS04-219RFPP PB04-073RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2B103J
transistor j210 Abstract: AGR09030E JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA Text: Preliminary Data Sheet November 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E packag-9138 DS04-294RFPP DS04-197RFPP) transistor j210 JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA
C1206C104KRAC7800 Abstract: RM73B2B473J Text: Preliminary Data Sheet August 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS02-218RFPP C1206C104KRAC7800 RM73B2B473J