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    RG MARKING CODE TRANSISTOR Search Results

    RG MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RG MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23 IP

    Abstract: marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6027 CMPP6028 Programmable unijunction CMPP6028 unijunction
    Text: Central CMPP6027 CMPP6028 SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT23 package, designed for adjustable programmable


    Original     		PDF CMPP6027 CMPP6028 OT-23 CMPP6027, CMPP6027 CMPP6028 29-April SOT-23 IP marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6028 Programmable unijunction unijunction

    marking code P28 SOT 23

    Abstract: transistor marking code p28 SOT-23 CMPP6028 CMPP6027 sot23 marking UA marking code P27 SOT 23
    Text: Central CMPP6027 CMPP6028 TM Semiconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT-23 package, designed for


    Original     		PDF CMPP6027 CMPP6028 CMPP6027, CMPP6028 OT-23 CMPP6027 05-September marking code P28 SOT 23 transistor marking code p28 SOT-23 sot23 marking UA marking code P27 SOT 23

    "Programmable Unijunction Transistor"

    Abstract: marking code P28 SOT 23 programmable unijunction transistor marking code P27 SOT 23 transistor p27 P28 SOT23 transistor marking code p28 SOT-23 CMPP6027 CMPP6028 P28 Transistor
    Text: Central CMPP6027 CMPP6028 TM Semiconductor Corp. SILICON PROGRAMMABLE UNIJUNCTION TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT-23 package, designed for


    Original     		PDF CMPP6027 CMPP6028 CMPP6027, CMPP6028 OT-23 CMPP6027 05-September "Programmable Unijunction Transistor" marking code P28 SOT 23 programmable unijunction transistor marking code P27 SOT 23 transistor p27 P28 SOT23 transistor marking code p28 SOT-23 P28 Transistor

    Untitled

    Abstract: No abstract text available
    Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive


    Original     		PDF IRGS4620DPbF IRGB4620DPbF IRGP4620D IRGP4620DPbF O-247AC O-220AC IRGP4620D-EPbF O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives


    Original     		PDF IRGS4630DPbF IRGB4630DPbF IRGP4630D IRGP4630DPbF O-247AC IRGP4630D-EPbF O-247AD O-220AC

    Untitled

    Abstract: No abstract text available
    Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB

    AN-994

    Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original     		PDF O-220 IRGB8B60KPbF IRGS8B60K IRGSL8B60K O-220AB IRGS8B60K O-262

    SL4B

    Abstract: FD059
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059

    AN-994

    Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K O-220AB AN-994 C-150 IRGS8B60K IRGSL8B60K Mbl transistor

    AN-994

    Abstract: C-150 igbt 400V 40A
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A

    d 1830

    Abstract: No abstract text available
    Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB d 1830

    AN-994

    Abstract: C-150 IRGS8B60K IRGSL8B60K
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K AN-994. AN-994 C-150 IRGS8B60K IRGSL8B60K

    AN-994

    Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994.

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB AN-994.

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V
    Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF 4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4545A IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W


    OCR Scan     		PDF 10kii, 47kii) Q62702-C2280 OT-323 300ns;

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 22ki2) Q62702-C2264 OT-23

    TRANSISTOR b1181

    Abstract: b1181 2SB1181F5
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,


    OCR Scan     		PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181

    transistor p27

    Abstract: 359 sot23 marking code 359 sot-23 transistor marking code p28 SOT-23 marking CC SOT-23 MARKING TR SOT23 sot23 js marking P27 pnp transistor t20 MARKING V0 sot23
    Text: Central" CMPP6027 CMPP6028 Semiconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a sur­ face mount SOT-23 package, designed for


    OCR Scan     		PDF CMPP6027 CMPP6028 CMPP6027, OT-23 CP622 CP624 transistor p27 359 sot23 marking code 359 sot-23 transistor marking code p28 SOT-23 marking CC SOT-23 MARKING TR SOT23 sot23 js marking P27 pnp transistor t20 MARKING V0 sot23