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    UNIJUNCTION Search Results

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    D13T1

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS D13T1-D13T2 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		D13T1-D13T2 MIL-PRF-19500, D13T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N6027-2N6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		2N6027-2N6028 MIL-PRF-19500, PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		2N6116-2N6118 MIL-PRF-19500, PDF

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two


    Original     		2N6027, 2N6028 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527 PDF

    NTE6400

    Abstract: NTE6400A rbbo unijunction transistor
    Text: NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,


    Original     		NTE6400 NTE6400A NTE6400A NTE6400 rbbo unijunction transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage


    Original     		2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500, PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MU2646, MU2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(RMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


    Original     		MU2646, MU2647 MIL-PRF-19500, PDF

    2N2646

    Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
    Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


    Original     		2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr" PDF

    2N6028 Application Note

    Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting


    Original     		2N6027, 2N6028 10igure 2N6028 2N6028RLRA 2N6027RL1 2N6028 Application Note 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028 PDF

    2N2160

    Abstract: No abstract text available
    Text: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance


    OCR Scan     		2N2160 PDF

    2n2646 2n2647

    Abstract: 2N2646 n2646
    Text: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current


    OCR Scan     		2N2646, 2N2647 2n2646 2n2647 2N2646 n2646 PDF

    applications of ujt with circuits

    Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
    Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point


    OCR Scan     		3T47375 506-475-5982---fax applications of ujt with circuits UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492 PDF

    2N6116

    Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
    Text: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes


    OCR Scan     		b3b7255 2N6116 2N6117 2N6118 2n6116 motorola Unijunction motorola programmable unijunction PDF

    2N4891

    Abstract: 2N4893 2N4894 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4
    Text: TYPES 2N4891 THRU 2N4894 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . O L-S 6 8 9 7 7 6 , J A N U A R Y 1967 PLAN AR UNIJUNCTION S IL E C T t TRANSISTORS^ FOR APPLICATIO N IN SCR D R IV E R S , MOTOR-SPEED CONTROLS, TIM ER S, W AVEFORM G EN ERA TO R S, M U LT IV IB R A TO R S , RING CO UN TERS,


    OCR Scan     		2N4891 2N4894 2N4893 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4 PDF

    MEU21

    Abstract: BRY39 2N6027 2N6028 BR101 BRY56 BRY56A MEU22
    Text: Special Devices PRO GRAM M ABLE UNIJUNCTION TR A N SIST O R S M A X I M U M R A T IN G S TYPE NO. CASE Pd mW 'a Im A ) VF (V ) BV GKF (V ) max 'f Im A ) VT 'p 'v 'g (V ) <jUA) (jUA) <nA) (nA) max max max max max 'g ks ao BRY56 BRY56A T O -9 2 B A T O -9 2 B A


    OCR Scan     		BRY56 O-92BA BRY56A MEU21 O-106 MEU22 2N6027 O-92BF BRY39 2N6028 BR101 PDF

    2N2646-47

    Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
    Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘


    OCR Scan     		2N2646-47 30Volts 35Volts 10/xF D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN PDF

    MPU6027

    Abstract: thyristor applications nt 407 f MPU6028 C1128
    Text: MPU6027, MPU6028 SILICON SILIC O N P R O G R A M M A B L E UNIJUNCTION T R A N SIST O R S 40 V O L T S 375 mW SIL IC O N P R O G R A M M A B L E U NIJUNCTION T R A N SIS T O R S . . . designed to enable the engineer to "p ro gra m " unijunction char­ acteristics such as R 8 B - 7?- *V ' anc* *P &Y merely selecting two resistor


    OCR Scan     		MPU6027, MPU6028 MPU6027 MPU6027 thyristor applications nt 407 f MPU6028 C1128 PDF

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027 PDF

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits PDF

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference PDF

    Unijunction transistor 2N2646 of

    Abstract: 2N2646P
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER


    OCR Scan     		2N2646 C8444 Unijunction transistor 2N2646 of 2N2646P PDF

    bry39

    Abstract: BRY39 circuit
    Text: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate


    OCR Scan     		bb53R31 BRY39 0D27fl3b bry39 BRY39 circuit PDF

    2N2422

    Abstract: No abstract text available
    Text: 2N2422 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2422 is a Unijunction Transistor, Designed for General Purpose Pulse, Timing, Sense and T rigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) m 60 V o V Ic Pd is s 360 mW @ Te $ 25 °C


    OCR Scan     		2N2422 2N2422 PDF

    2n1671a

    Abstract: unijunction transistor
    Text: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) 30 V 450 mW @ Te = 25 0C


    OCR Scan     		2N1671A 2N1671A unijunction transistor PDF