Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FD059 Search Results

    SF Impression Pixel

    FD059 Price and Stock

    Samtec Inc MTSW-110-08-F-D-059

    CONN HEADER VERT 20POS 2.54MM
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTSW-110-08-F-D-059 Bulk 1
    • 1 $2.06
    • 10 $2.06
    • 100 $2.06
    • 1000 $2.06
    • 10000 $2.06
    		Buy Now
    Avnet Americas MTSW-110-08-F-D-059 Bulk 1
    • 1 $2.06
    • 10 $2.06
    • 100 $1.43
    • 1000 $0.98
    • 10000 $0.98
    		Buy Now
    Mouser Electronics MTSW-110-08-F-D-059
    • 1 $2.06
    • 10 $2.06
    • 100 $1.43
    • 1000 $0.98
    • 10000 $0.49
    		Get Quote
    Newark MTSW-110-08-F-D-059 Bulk 1
    • 1 $2.91
    • 10 $2.91
    • 100 $1.99
    • 1000 $0.971
    • 10000 $0.949
    		Buy Now
    Master Electronics MTSW-110-08-F-D-059
    • 1 -
    • 10 -
    • 100 $1.615
    • 1000 $1.074
    • 10000 $0.718
    		Buy Now
    Sager MTSW-110-08-F-D-059 1
    • 1 $2.06
    • 10 $2.06
    • 100 $1.43
    • 1000 $0.98
    • 10000 $0.88
    		Buy Now

    Samtec Inc MTMM-107-04-F-D-059

    VARIABLE POST HEIGHT HEADER STRI
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTMM-107-04-F-D-059 Bulk 1
    • 1 $2.13
    • 10 $2.13
    • 100 $2.13
    • 1000 $2.13
    • 10000 $2.13
    		Buy Now
    Avnet Americas MTMM-107-04-F-D-059 Bulk 1
    • 1 $2.13
    • 10 $2.13
    • 100 $1.48
    • 1000 $0.97
    • 10000 $0.97
    		Buy Now
    Master Electronics MTMM-107-04-F-D-059
    • 1 -
    • 10 -
    • 100 $1.666
    • 1000 $1.074
    • 10000 $0.661
    		Buy Now
    Sager MTMM-107-04-F-D-059 1
    • 1 $2.13
    • 10 $2.13
    • 100 $1.48
    • 1000 $0.97
    • 10000 $0.85
    		Buy Now

    Samtec Inc MTSW-105-07-F-D-059-RA

    CONN HEADER R/A 10POS 2.54MM
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTSW-105-07-F-D-059-RA Bulk 1
    • 1 $1.28
    • 10 $1.28
    • 100 $1.28
    • 1000 $1.28
    • 10000 $1.28
    		Buy Now
    Avnet Americas MTSW-105-07-F-D-059-RA Bulk 1
    • 1 $1.28
    • 10 $1.28
    • 100 $0.8
    • 1000 $0.52
    • 10000 $0.52
    		Buy Now
    Mouser Electronics MTSW-105-07-F-D-059-RA
    • 1 $1.28
    • 10 $1.28
    • 100 $0.8
    • 1000 $0.52
    • 10000 $0.26
    		Get Quote
    Master Electronics MTSW-105-07-F-D-059-RA
    • 1 -
    • 10 -
    • 100 $1.0043
    • 1000 $0.5917
    • 10000 $0.4023
    		Buy Now
    Sager MTSW-105-07-F-D-059-RA 1
    • 1 $1.28
    • 10 $1.28
    • 100 $0.8
    • 1000 $0.52
    • 10000 $0.47
    		Buy Now

    Samtec Inc MTSW-220-08-F-D-059

    Conn Unshrouded HDR 40 POS 5.08mm Solder ST Through Hole - Bulk (Alt: MTSW-220-08-F-D-05)
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MTSW-220-08-F-D-059 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Master Electronics MTSW-220-08-F-D-059
    • 1 $6.81
    • 10 $6.81
    • 100 $3.91
    • 1000 $3.44
    • 10000 $2.59
    		Buy Now
    Sager MTSW-220-08-F-D-059
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Semiconductors VS-FD059U06A6P

    VS-FD059U06A6P BARE DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ES Components VS-FD059U06A6P 4,961
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    FD059 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD059H06A5B

    Abstract: 31-2 MIL-HDBK-263 S1025
    Text: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		PDF 0512J FD059H06A5B 12-Mar-07 FD059H06A5B 31-2 MIL-HDBK-263 S1025

    FD059

    Abstract: No abstract text available
    Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		PDF 0513J FD059U06A5B FD059

    FD059U06A5B

    Abstract: fd059u06 MIL-HDBK-263 S1025 FD059
    Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		PDF 0513J FD059U06A5B 12-Mar-07 FD059U06A5B fd059u06 MIL-HDBK-263 S1025 FD059

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0513J 02/03 FD059U06A5. Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.499 ± 0.01 (59.01 ± 0.4)


    Original     		PDF I0513J FD059U06A5. S1025 O-220 059x059

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.

    SL4B

    Abstract: FD059
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.

    igbt 500V 22A

    Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. igbt 500V 22A C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B

    AN-994

    Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60K IRGS4B60K IRGSL4B60K O-220 IRGB4B60K IRGS4B60K O-262 AN-994. FD059H06A5.

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V
    Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF 4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. FD059H06A5. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF 4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994.

    AN-994

    Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1

    AN-994

    Abstract: C-150 igbt 400V 40A
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A