Untitled
Abstract: No abstract text available
Text: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.
|
Original
|
PDF
|
O-220
IRGB8B60KPbF
IRGS8B60K
IRGSL8B60K
O-220AB
IRGS8B60K
O-262
|
TO-220AB transistor package
Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
Text: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C
|
Original
|
PDF
|
94545B
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
O-220AB
TO-220AB transistor package
C-150
IRGB8B60K
IRGS8B60K
IRGSL8B60K
|
C-150
Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C
|
Original
|
PDF
|
94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
AN-994.
C-150
IRF1010
IRF530S
IRGB8B60K
IRGS8B60K
IRGSL8B60K
|
AN-994
Abstract: C-150 HF03D060ACE
Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
95645B
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
O-220AB
O-262
IRGB8B60KPbF
IRGS8B60KPbF
AN-994.
AN-994
C-150
HF03D060ACE
|
AN-994
Abstract: C-150 IRGS8B60K IRGSL8B60K
Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
|
Original
|
PDF
|
5645A
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
O-220AB
IRGB8B60KPbF
IRGS8B60K
O-262
IRGSL8B60K
AN-994.
AN-994
C-150
IRGS8B60K
IRGSL8B60K
|
Untitled
Abstract: No abstract text available
Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C
|
Original
|
PDF
|
94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
AN-994.
|
C-150
Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C
|
Original
|
PDF
|
94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
O-220AB
C-150
IRF1010
IRF530S
IRGB8B60K
IRGS8B60K
IRGSL8B60K
TO-220AB transistor package
11mH
|
Untitled
Abstract: No abstract text available
Text: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
O-220AB
AN-994.
|
AN-994
Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor
Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
|
Original
|
PDF
|
5645A
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
O-220AB
IRGB8B60KPbF
IRGS8B60K
O-262
IRGSL8B60K
O-220AB
AN-994
C-150
IRGS8B60K
IRGSL8B60K
Mbl transistor
|
Untitled
Abstract: No abstract text available
Text: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
4545A
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
|
Original
|
PDF
|
95645B
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
O-220AB
O-262
IRGB8B60KPbF
IRGS8B60KPbF
AN-994.
|
C-150
Abstract: IRGS8B60K IRGSL8B60K
Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
|
Original
|
PDF
|
5645A
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
O-220AB
IRGB8B60KPbF
IRGS8B60K
O-262
IRGSL8B60K
IRGB/S/SL8B60KPbF
C-150
IRGS8B60K
IRGSL8B60K
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
PDF
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|