Untitled
Abstract: No abstract text available
Text: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)
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GT15J102
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1MBI600S-120
Abstract: No abstract text available
Text: This material and tie ‘nhrmation herein 3s (he properly cf Fcji Electric Ca.UcJJhcy shall be nelihor nproducoa, copied. Icti. or disclosed n any wav whatsoever (or the use of any third psny.nc: used (or the manufacturing purposes without fha expross wtlncn consem of Fuji Siectrlc Co. Lid.
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1MBI600S-120
H04-0Ã
H04-004-03
15ohfn
0J001
H04-004-03
1MBI600S-120
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rc servo motor torque speed
Abstract: No abstract text available
Text: 6-Pack IGBT 1200 V 25 A FUJI @ TL@ G =STO SDË IGBT MODULE L series O u tlin e D ra w in g s • F e a tu re s • High S peed S w itching • Low S a tu ratio n V oltage 0 V oltage Drive ■ A p p lic a tio n s • Inverter fo r M o to r Drive • A C and DC S ervo Drive A m p lifie r
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transistor BF 502
Abstract: 502 TJ
Text: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
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SML200G100BFN
SML200G100BFN
MIL-STD-750
transistor BF 502
502 TJ
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ta9687
Abstract: 10N50A 10n40 10n50 10N40A TA943 10n5 TA9438 RCA 713 TA9437
Text: Insulated-Gate Bipolar Transistors IGTH10N40 IGTH10N40A IGTH10N50 IGTH10N50A IGTM10N40 IGTM10N40A IGTM10N50 IGTM10N50A IGTP10N40 IGTP10N40A IGTP10N50 IGTP10N50A File N um b er 1697 TERMINAL DIAGRAM N-Channel Enhancement Mode Conductivity-Modulated Power Field-Effect Transistors
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IGTH10N40
IGTM10N40
IGTP10N40
IGTH10N40A
IGTM10N40A
IGTP10N40A
IGTH10N50
IGTM10N50
IGTP10N50
IGTH10N50A
ta9687
10N50A
10n40
10n50
10N40A
TA943
10n5
TA9438
RCA 713
TA9437
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h15120
Abstract: MBH15D-120
Text: Fuji New Semiconductor Products , | . — , i t TT — J V h M if K | _ _ _ 1 2 0 0 V /1 5 A |G B T 1MBH15-120,1MBH15D-120 Features • • ¡ tilU tt, • I f 4 '7 iM U M 7 7 R B S O A ,S C S O A 4 '£ ^ • Small molded package • Low power loss • Soft switching with low switching surge and noise
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1MBH15-120
1MBH15D-120
MBH15-120
h15120
MBH15D-120
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6MBI50FA-060
Abstract: 6MBI50FA060 MCR 100-6 P M603 rG510 rth 13 sp HF IGBT
Text: 6MBI50FA-060 50A IGBT —)V ' O utline Drawings IGBT MODULE ;iO|r IBS | 185 t 18.6 | 1B.S CO) *’*•* 17 4.5 14 4.6 14. 4.6 14 4 .5 IT ■ 4 M t : Features • f & L o w Saturation Voltage • « S E H l C M O S *— H * £ ) Voltage Drive • Variety of Power Capacity Series
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6MBI50FA-060
0CI3C3CZ30CD00
6MBI50FA-060
6MBI50FA060
MCR 100-6 P
M603
rG510
rth 13 sp
HF IGBT
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transistor TT 2146
Abstract: APT50G50BN APT50G60BN APT50G60 538J
Text: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
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APT50G60BN
APT50G50BN
O-247AD
transistor TT 2146
APT50G60
538J
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7MBR30SA060
Abstract: tiac 251C i5ij fuji igbt 7mbr mbr30sa
Text: This m aterial and the Information herein Is the property o l Fuji Etecinc Co„lid.T hey Sh»H be neither reproduced, copied lent, or disclosed in any way w hatsoever for the use of any third partyrw used for the manufacturing purposes without ihe express written c o n se n t oí Fuji Electric Co. Ltd.
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7MBR30SA060
H04-004-07
Vcc-300V,
H04-004-03
7MBR30SA060
tiac
251C
i5ij
fuji igbt 7mbr
mbr30sa
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Untitled
Abstract: No abstract text available
Text: GT8J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 .3 0 3 .2 ± 0 .2 2.7 ± 0 .2 i S- “ “ . High Input Impedance . High Speed : t f -O.35ys Max. . Low Saturation Voltage : V c E ( s a t ) “^ • 0V(Max.)
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GT8J101
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IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
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1750A
30KHz
T-39-15
IXGH10N60U1
IXGH10N60AU1
IXGH20N60U1
IXGH17N100AU1
SOT227B package
IXSH20N60U1
*GH20N60AU1
1XYS
UltraFast 5-40 kHz
E1S4
TI231
IGBT 20A 600V ABB
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Untitled
Abstract: No abstract text available
Text: Modules 1200V GR Series Trade-Off Curves «< 1200V class » > Features •f Low Loss • turn-OFF switching loss ; approx. -25% compare with GS series • IGBT'sVcE sat ; typ 2.2V (-0.5V compare with GS series) 2 Improved Thermal Impedance • IGBT ; approx. -10% compare with
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ge-15V)
Vge-15V)
200V/100A
30Arms
10kHz
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6mb120
Abstract: AL 60DV 6MBI200FB-060 J3009
Text: 6MBI200FB-060 200A IGBT : Outline Drawings IGBT MODULE : Features Low S aturation Voltage • te ts * a * /± • • lE E K l ( M O S ^ — U B ifi) • V olta ge Drive Variety o f Pow er Capacity Series * A p p lica tio n s > '< —f • AC, D C • Inverter fo r M o to r Drive
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6MBI200FB-060
6mb120
AL 60DV
6MBI200FB-060
J3009
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Untitled
Abstract: No abstract text available
Text: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Description Features This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices
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HGTP12N60C3R,
HGT1S12N60C3R,
HGT1S12N60C3RS
250ns
1-800-4-HARRIS
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