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    SL4B Price and Stock

    Panduit Corp PSL-4BLU

    XENOY PADLOCK 1.50 BODY BLUE
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    Amphenol Aerospace 9442F10SL-4B

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    Amphenol Aerospace 9442W10SL-4B

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    Amphenol Aerospace 9444F10SL-4B

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    Amphenol Aerospace 9441F10SL-4B

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    SL4B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 SL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5 PDF

    SL52R

    Abstract: Pentium 3 SL52R FC-PGA370 SL4C8 SL4C9 SL52P sl4cg intel Pentium III-S SL45U SL448
    Text: Intel Pentium® III Processor Specification Update Release Date: November 2001 Order Number: 244453-035 The Pentium® III processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this


    Original     		-256K 933MHz 130mV 110mV. 110mV SL52R Pentium 3 SL52R FC-PGA370 SL4C8 SL4C9 SL52P sl4cg intel Pentium III-S SL45U SL448 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 SL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. PDF

    C-150

    Abstract: IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 SL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 O-220AB. C-150 IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V PDF

    SL52R

    Abstract: FC-PGA 370 06B1H SL3VF SL52P SL5dv SL45U Pentium 3 SL52R SL45Z SL4C8
    Text: Pentium III Processor Identification and Package Information S-Spec Core Steppings CPUID Speed MHz Core/Bus11 L2 Size (Kbytes) Tag RAM/ Steppings ECC/ Non-ECC Processor Substrate Revision Package and Revision † Notes SL364 kB0 0672h 450/100 512 T6P-e/A0


    Original     		Core/Bus11 SL364 0672h SL365 SL38E SL38F SL52R FC-PGA 370 06B1H SL3VF SL52P SL5dv SL45U Pentium 3 SL52R SL45Z SL4C8 PDF

    SL4B

    Abstract: FD059
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF SL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059 PDF

    Pentium 3 SL52R

    Abstract: SL52R sl4cg sl52p ECC99 intel Pentium III-S SL37C SL35E SL4ZL 600EB
    Text: Intel Pentium® III Processor Specification Update August 2008 Revision 060 Document Number: 244453-060 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS


    Original     		450MHz 13GHz PGA370 500MHz 512KB IA-32 Pentium 3 SL52R SL52R sl4cg sl52p ECC99 intel Pentium III-S SL37C SL35E SL4ZL 600EB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF SL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. PDF

    igbt 500V 22A

    Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 SL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. igbt 500V 22A C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B PDF

    AN-994

    Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF SL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF SL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF SL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94633 IRGB4B60K IRGS4B60K SL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60K IRGS4B60K IRGSL4B60K O-220 IRGB4B60K IRGS4B60K O-262 AN-994. FD059H06A5. PDF

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K SL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K PDF

    132418

    Abstract: wiring diagram DOL starter PLC Eaton MCB 044947 - B3.1/4-PKZ0
    Text: Moeller series Command and Signalling Motor Applications Product Overview for Machinery Automation Power Management Aerospace Powering Business Worldwide Discover Eaton – a leader in the power management field Since 1911, when our company began trading as a small truck parts


    Original     		D-53115 CA08103003Z-EN-INT 132418 wiring diagram DOL starter PLC Eaton MCB 044947 - B3.1/4-PKZ0 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K SL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 SL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V
    Text: PD - 94633A IRGB4B60K IRGS4B60K SL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V PDF

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K SL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 SL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. FD059H06A5. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94633A IRGB4B60K IRGS4B60K SL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. PDF

    AN-994

    Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 SL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1 PDF

    AN-994

    Abstract: C-150 igbt 400V 40A
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF SL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A PDF

    SL365

    Abstract: SL447 TF5S04ZZ tamura 0340 F5S04 SL4-23 SL440 SL0626
    Text: “tam ura TOROIDAL POWER INDUCTORS See O pposite Page for Specifications MICROTRAIM. Swinging Chokes for Switch Mode Power Supplies, Energy Storage, Regulator, and EMI/RFI Filter Applications • Specially designed for controlled saturation .repeatable specific inductance at a specific current.


    OCR Scan     		SL2-50-F. SL05---F SL06---F SL365 SL447 TF5S04ZZ tamura 0340 F5S04 SL4-23 SL440 SL0626 PDF