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    Infineon Technologies AG IRGS10B60KDPBF

    IGBT 600V 22A 156W D2PAK
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    IRGS10B60KDPBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRGS10B60KDPBF International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; Similar to IRGS10B60KD with Lead Free Packaging Original PDF
    IRGS10B60KDPBF International Rectifier Original PDF

    IRGS10B60KDPBF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB

    AN-994

    Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994.

    AN-994

    Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L

    d 1830

    Abstract: No abstract text available
    Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB d 1830

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter