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    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT

    DG34B

    Abstract: No abstract text available
    Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BS D034b64 DG34B

    KM44C4104bk

    Abstract: cd-rom circuit diagram
    Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BK 7Tbm42 0034bb2 KM44C4104bk cd-rom circuit diagram

    marking WMM

    Abstract: RA52 1cas5 22r29
    Text: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory


    OCR Scan     		PDF 225mW 1024-cycle D01-4 T-46-23-17 MT4C4256DJ MT4C4259EJ marking WMM RA52 1cas5 22r29

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MICRON 4 MEG TECHNOLOGY. INC U SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH 72-Pin Small-Outline DIMM DE-5 SOJ version (DE-3) TSOP version -6 -7 D DT Packages 7 2 -pin Small-Outline DIMM (gold) Refresh Standard/32m s


    OCR Scan     		PDF 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N MT4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses


    OCR Scan     		PDF MT4C8512/3 350mW 024-cycle MT4C8513 28-Pin blllS41

    KM44C1003c

    Abstract: No abstract text available
    Text: KM44C1003C CMOS DRAM 1 Mx 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power


    OCR Scan     		PDF KM44C1003C KM44C1003c

    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416V254DJ 256Kx16 DQ0-DQ15 rbbb

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4105BK 003470b

    KM416C64

    Abstract: No abstract text available
    Text: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption


    OCR Scan     		PDF KM416C64 64Kx16 KM416C64/L KM416C64

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000A1/A1G KMM5362000A1 bitsX36 20-pin 72-pin 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: MT4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cy cle re fre sh in 8m s (M T 4C 1024) o r 6 4 m s (M T 4C 1024 L) • In d u stry -stan d a rd x l p in o u t, tim in g , fu n ctio n s and p ack ag e s


    OCR Scan     		PDF MT4C1024 512-cy T4C1024

    51C256L

    Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
    Text: [P iF S iiU B lO tM Ä ß W in te T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)


    OCR Scan     		PDF 51C256L 51C256L-12 51C256L-15 51C256L-20 51C256L-20 28003* intel

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 640 Megabit CMOS DRAM DPD16MX40PKW5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPD16MX40PKW5 is the 16 Meg x 40 ECC Dynamic RAM module in the family of SuperSIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of 4 stacks consisting of four 16 Meg x


    OCR Scan     		PDF DPD16MX40PKW5 DPD16MX40PKW5 72-pin 3QA153-10

    20100c

    Abstract: 13409C
    Text: CELESTICA 8M x 36 PARITY FPM SIMM FEATURES • • 72-pin industry standard 4-byte single-in-line memory module Compliant with JEDEC standards 21 -C and MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5V ± 10% power supply


    OCR Scan     		PDF 72-pin MO-116 20432C) 14424C 20100c 13409C

    20264C

    Abstract: No abstract text available
    Text: CELESTICA„ 8M x 72 EDO ECC UNBUFFERED DIMM FEATURES 168-pin industry standard eight-byte dual-in-line memory module JEDEC compliant: 21-C, Figure 4.5.3-A, B, F, D, N Release 7 No. 95 MO-161 High performance, CMOS Single 3.3V ± 0.3 power supply LVTTL-compatible inputs and outputs


    OCR Scan     		PDF 168-pin MO-161 20431C) 20335C 20264C

    200jjs

    Abstract: No abstract text available
    Text: CELESTICA 2M x 64 FPM BUFFERED DIMM FEATURES • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 C, Fig. 4-13A, B, C, D, F Release 4 : No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3 ± 0.3V power supply


    OCR Scan     		PDF 168-pin MO-161 20432C) 16160C 200jjs

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 1M x 64 FPM UNBUFFERED DIMM FEATURES • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 3.3 ± 0.3V power supply LVTTL-compatible inputs and outputs


    OCR Scan     		PDF 168-pin MO-161 20432C) 16143C

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 2M x 64 FPM UNBUFFERED DIMM FEATURES • • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 3.3 ± 0.3V power supply LVTTL-compatible inputs and outputs


    OCR Scan     		PDF 168-pin MO-161 20432C) 16142C

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A HY51V16100A V16100Ato 1AD21-0O-MAY94 HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V161OOASLT HY51V16100AR

    Untitled

    Abstract: No abstract text available
    Text: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100 DDD14Ã 3380i8 1AC01-20-APR93 4L750flfl HY514100J

    Untitled

    Abstract: No abstract text available
    Text: HY51V17405B Series •HYUNDAI 4M x 4-bit CMOS DRAM with Burst EDO DESCRIPTION The HY51V17405B is the new generation and fast dynamic RAM organized 4,194,304x4-bit. The HY51V17405B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques to prove wide


    OCR Scan     		PDF HY51V17405B 304x4-bit. HY51V17405B 1AD61-00-MAY95 HY51V17405BJC HY51V17405BSLJC HY51V17405BTC

    030b4T

    Abstract: C1204B
    Text: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BJ 16Bit 1Mx16 7Rb4142 03Qb5 030b4T C1204B