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    KM44C4 Price and Stock

    Samsung Semiconductor KM44C4100CK-6

    DRAM - 16MBit (4M x 4) - 5V - 24-Pin SOJ
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    Onlinecomponents.com KM44C4100CK-6 706
    • 1 $19.84
    • 10 $11.32
    • 100 $5.28
    • 1000 $5.28
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    Samsung Semiconductor KM44C4000AJ-5

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    Bristol Electronics KM44C4000AJ-5 16
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    Samsung Semiconductor KM44C4000AT-6

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    Quest Components KM44C4000AT-6 47
    • 1 $5.4
    • 10 $2.7
    • 100 $2.7
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    Samsung Semiconductor KM44C4000CK-6

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    Bristol Electronics KM44C4000CK-6 100 1
    • 1 $6.72
    • 10 $4.368
    • 100 $2.9118
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    Quest Components KM44C4000CK-6 80
    • 1 $9
    • 10 $4.5
    • 100 $4.2
    • 1000 $4.2
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    Samsung Semiconductor KM44C4000BK-6

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    Bristol Electronics KM44C4000BK-6 4
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    KM44C4 Datasheets (139)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM44C4000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM44C4000-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4000C Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CK-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CK-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CK-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CKL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4000CK-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CKL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4000CS-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CS-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CS-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CSL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4000CS-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CSL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4000J-6 Samsung Electronics 4M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C4000J-7 Samsung Electronics 4M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C4000J-8 Samsung Electronics 4M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    ...

    KM44C4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original
    PDF KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C advanc4V4104C 300mil

    KM44C4000C

    Abstract: KM44C4100C KM44V4000C KM44V4100C V4100C
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original
    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ba4V4100C 300mil KM44C4000C KM44C4100C KM44V4000C KM44V4100C V4100C

    DG34B

    Abstract: No abstract text available
    Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4 KM44C4104BS D034b64 DG34B

    taa 723

    Abstract: A0-A10J-1 A10C A10EC
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss


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    PDF KM44C4002A, KM44C4102A taa 723 A0-A10J-1 A10C A10EC

    KM44C4004B

    Abstract: No abstract text available
    Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4004B KM44C4004BS 0034S12

    Untitled

    Abstract: No abstract text available
    Text: KM44C4102A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION T h e S am su ng K M 4 4 C 4 1 0 2 A /A L /A L L /A S L is a high • Performance range: K M 44C 4102A /A L/A LL/A S L-5 tRAC tCAC tac 50ns 13ns


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    PDF KM44C4102A/AL/ALL/ASL 110ns 150ns 130ns 24-LEAD 300MIL, 400MIL)

    QAC22

    Abstract: ez 948 ic
    Text: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its


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    PDF KM44C4002 KM44C4002 KM44C4002-7 KM44C4002-8 KM44C4002-6 24-LEAD QAC22 ez 948 ic

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


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    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 4V4000C,

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


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    PDF KM44C4003BS D344bfl

    KM44C4000B

    Abstract: No abstract text available
    Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    PDF KM44C4000B KM44C4000BS

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b?E ]> Bi 7 c3 b m M 5 KM44C4102 001b2tia Tb2 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its


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    PDF KM44C4102 001b2tia KM44C4102 304x4 KM44C4102-7 130ns KM44C4102-8 150ns KM44C4102-6

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4100L 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM44C4100L KM44C4100L 110ns KM44C4100L-7 130ns KM44C4100L-8 KM44C4100L-6 150ns 47/iF

    Untitled

    Abstract: No abstract text available
    Text: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C401OA/AL/ALL/ASL is a high speed CMOS 4,194,304 b it x 4 Dynamic Random Access Memory. Its design is optim ized for high


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    PDF KM44C401OA/AL/ALL/ASL KM44C401OA/AL/ALL/ASL KM44C401OA/AL/ALL/ASL-5 KM44C401OA/AL/ALL/ASL-6 110ns KM44C401OA/AL/ALL/ASL-7 130ns KM44C401OA/AL/ALL/ASL-8 150ns 300MIL)

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily of 4 .1 9 4 ,3 0 4 x 4 bit E xte n d e d D a ta O u t C M O S D R A M s. E xte n d e d D a ta O u t M ode o ffe rs high sp e e d ran d o m a c c e s s of


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    PDF KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C sh04C 300mil

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B

    Untitled

    Abstract: No abstract text available
    Text: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom


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    PDF KM44C4110A/AL/ALL/ASL 110ns 130ns 150ns KM44C411OA/AL/ALL/ASL 24-LEAD 300MIL) 300MIL,

    Untitled

    Abstract: No abstract text available
    Text: KM44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 4 1 00 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C4100 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss


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    PDF KM44C4002A, KM44C4102A

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access


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    PDF KM44C4003A, KM44C4103A C55-before-ES5

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4110A/AL/ALL/ASL 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 4 C 4 1 1 0 A / A L / A L L / A S L is a h ig h • Performance range: speed CMOS 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m


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    PDF KM44C4110A/AL/ALL/ASL KM44C4110A/AL/ALL/ASL-5 KM44C4110A/ALVALL/ASL-6 KM44C4110A/AL/ALLyASL-7 KM44C4110A/AL7ALL/ASL-8 110ns 130ns 150ns 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C4110 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4110 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C4110 KM44C4110 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004A/AL/ALL/AS L CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tfiC tHPC KM44C4004A/AL/ALL/ASL-5 50ns 13ns 90ns 20ns KM44C4004A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM44C4004A/AL/ALL/ASL-7


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    PDF KM44C4004A/AL/ALL/AS KM44C4004A/AL/ALL/ASL-5 KM44C4004A/AL/ALL/ASL-6 110ns KM44C4004A/AL/ALL/ASL-7 130ns KM44C4004A/AL/ALL/ASL-8 150ns KM44C4004A/AL/ALL/ASL KM44C4004A/AL/ALL/ASL

    Untitled

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM44C4000L OOlblbfl Gñl ■ SMGK CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­


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    PDF KM44C4000L KM44C4000L 110ns KM44C4000L-7 130ns KM44C4000L-8 KM44C4000L-6 150ns 47fiF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4004BK 512Kx8) 7Tb414E