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    350MW Search Results

    350MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM4819MBD/NOPB Texas Instruments 350mW Audio Power Amplifier with Shutdown Mode Visit Texas Instruments Buy
    LM4819MMX/NOPB Texas Instruments 350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    LM4819MX/NOPB Texas Instruments 350mW Audio Amplifier with Shutdown Mode 8-SOIC -40 to 85 Visit Texas Instruments Buy
    LM4818MX/NOPB Texas Instruments 350mW Audio Power Amplifier with Shutdown Mode 8-SOIC -40 to 85 Visit Texas Instruments Buy
    LM4819MM/NOPB Texas Instruments 350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 Visit Texas Instruments Buy
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    350MW Price and Stock

    Eaton Cutler-Hammer E2KW3350MWW (ALTERNATE: E2KW3350MWW)

    1200V MINING MCCB 3P 350A MAG ONLY 1250-2500A TRIP RANGE | Eaton - Cutler Hammer E2KW3350MWW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS E2KW3350MWW (ALTERNATE: E2KW3350MWW) Bulk 5 Weeks 1
    • 1 $10021.53
    • 10 $9520.46
    • 100 $9520.46
    • 1000 $9520.46
    • 10000 $9520.46
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    ROHM Semiconductor RK7002BMT116

    MOSFETs 2.5V Drive Nch MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RK7002BMT116 Reel 1,392,000 3,000
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    • 10000 $0.0218
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    Vishay Intertechnologies TP0610K-T1-E3

    MOSFETs -60V Vds 20V Vgs SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TP0610K-T1-E3 Reel 117,000 3,000
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    • 10000 $0.124
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    Vishay Intertechnologies 2N7002E-T1-E3

    MOSFETs 60V 0.24A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002E-T1-E3 Reel 93,000 3,000
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    • 10000 $0.087
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    Vishay Intertechnologies BAV70-E3-08

    Small Signal Switching Diodes 70 Volt 250mA 2.0 Amp IFSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAV70-E3-08 Reel 93,000 3,000
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    350MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM4819 LM4819 350mW Audio Power Amplifier with Shutdown Mode Literature Number: SNAS133C LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load


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    PDF LM4819 LM4819 350mW SNAS133C 350mWRMS

    ray 40

    Abstract: No abstract text available
    Text: Plug-In RAY-3+ RAY-3 Frequency Mixer Level 23 LO Power +23 dBm 0.07 to 200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • excellent conversion loss, 5.53 dB typ.


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    PDF 350mW 2002/95/EC) ray 40

    28438

    Abstract: M121747
    Text: Coaxial Frequency Mixer ZAY-1+ Level 23 LO Power +23 dBm 5 to 500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.57 dB typ. • high L-R isolation, 40 dB typ. L-R & L-I


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    PDF 350mW 2002/95/EC) 28438 M121747

    DEVICE MARKING CODE table

    Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
    Text: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C43 BZX84C47 BZX84C51 Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · ·


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    PDF BZX84C43 BZX84C51 350mW BZX84C47 OT-23 OT-23, J-STD-020A DEVICE MARKING CODE table 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A

    MMBZ5223B

    Abstract: Zener Diode SOT-23 marking kh5 MMBZ5221B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B
    Text: MMBZ5221B - MMBZ5259B 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5235B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5240B MMBZ5241B MMBZ5242B MMBZ5243B MMBZ5245B MMBZ5246B MMBZ5248B MMBZ5250B


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    PDF MMBZ5221B MMBZ5259B 350mW MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B Zener Diode SOT-23 marking kh5 MMBZ5229B MMBZ5230B MMBZ5231B

    Untitled

    Abstract: No abstract text available
    Text: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and


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    PDF 350mW DO-35 MIL-STD-202, DO-35

    Untitled

    Abstract: No abstract text available
    Text: New Au d i o I n t e r fa c e I C A N 2 9 0 6 F J M • Overview 12 22 34 33 11 0.40 0.10 SEATING PLANE 11 44 0.48 5.00±0.10 12 44 (1.10) 0. 1 22 ■ Features ●Speaker amplifier. • BTL amplifier (350mW 8Ω Vcc=3.3V) ●Built-in power-save function.


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    PDF 350mW AN2906FJM

    all type zener diode code voltage

    Abstract: CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619
    Text: Central CMPZ4614 THRU CMPZ4627 TM Semiconductor Corp. SURFACE MOUNT 350mW LOW NOISE SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4614 Series types are high quality silicon zener diodes designed for low leakage, low current and low noise applications.


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    PDF CMPZ4614 CMPZ4627 350mW OT-23 200mA CMPZ4622* CMPZ4623 CMPZ4624* CMPZ4625 all type zener diode code voltage CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619

    Untitled

    Abstract: No abstract text available
    Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF KST5551 350mW OT-23 2N5551

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


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    PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    T9SV1K15-12

    Abstract: No abstract text available
    Text: General Purpose Relays Power Relays Potter & Brumfield Power PCB Relay T9S Solar n 1 pole 35A, 1 form A NO contact gap >1.5mm n 350mW hold power n Ambient temperature up to 85°C at 35A n The appliance is able to meet VDE V 0126-1-1 n Product in accordance to IEC 60335-1


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    PDF n350mW nEN61095: 2500Vrms 4000Vrms E22575 T9SV1K15-12 12VDC T9SV1K15-12

    Untitled

    Abstract: No abstract text available
    Text: MMBD4448H 0.25A Surface-mount Switching Diode Voltage range 80 Volts 350mW Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications


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    PDF MMBD4448H 350mW OT-23 OT-23,

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C27 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C27 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C7V5 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C4V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C4V3 OT-23 350mW

    BZX84C18

    Abstract: No abstract text available
    Text: Product specification BZX84C18 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C18 OT-23 350mW BZX84C18

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C3V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C3V3 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C16 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C2V4 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C2V4 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C11 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF BZX84C20 OT-23 350mW

    65060

    Abstract: No abstract text available
    Text: Coaxial ZMY-2+ ZMY-2 Frequency Mixer Level 23 LO Power +23 dBm 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.89 dB typ. • high isolation, 40 dB typ. L-R, 35 dB typ. L-I


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    PDF 350mW 2002/95/EC) 65060

    LM4819

    Abstract: LM4819M LM4819MM M08A
    Text: LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load or 300mWRMS output power into an 8Ω load with 10%


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    PDF LM4819 350mW LM4819 350mWRMS 300mWRMS LM4819M LM4819MM M08A

    ZFY-11-S

    Abstract: ZFY-11
    Text: Coaxial Frequency Mixer ZFY-11 Level 23 LO Power +23 dBm 10 to 2400 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 7.40 dB typ. • wideband, 10 to 2400 MHz


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    PDF ZFY-11 350mW ZFY-11-S ZFY-11-S ZFY-11