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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM532256A 32-bit HY534256A 22/tF HYM532256AM/ALM HYM532256AMG/ALMG 4b75oaa	PDF
Untitled Abstract: No abstract text available Text: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY51V17400A HY51V17400A 1AD35-00-MAY95 HY51V17400AJ HY51V17400ASLJ HY51V17400AT HY51V17400ASLT	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU	PDF
Untitled Abstract: No abstract text available Text: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY514100 DDD14Ã 3380i8 1AC01-20-APR93 4L750flfl HY514100J	PDF
hy512260 Abstract: No abstract text available Text: • H Y U N D A I H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access	OCR Scan	128KX 16-bit HY512260 400mil 40pin 40/44pin 11-00-MAY95	PDF
P55i Abstract: B0000h-BFFFF Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and	OCR Scan	16Kbytes, HY29F800 16-bit 16-bit) P-55I, T-55I, R-551 P-55E, T-55E, P55i B0000h-BFFFF	PDF
d947 Abstract: hy51v18164b Text: • « H Y U N D A I H Y M 5 V 7 2 A 1 2 4 A R - S e r ie s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168	OCR Scan	72-bit HYM5V72A124A HY51V4404B HY51V18164B 2048bit HYM5V72A124ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1ECM-10-APR96 d947	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HYM540100 Series 1M x 40-bit C M O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM540100 is a 1M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY514400A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM540100 40-bit HY514400A 22/uF HYM540100M/LM HYM540100MG/LMG 0002G7fl	PDF
Untitled Abstract: No abstract text available Text: HYC532100 Series »HYUNDAI 1Mx32 DRAM CARD DESCRIPTION The HYC532100 is the DRAM memory card consisting of eight HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized for the applications such as buffering, main and add-in memory in the portable	OCR Scan	HYC532100 1Mx32 HY514400ALT x32/16 4b750flfl 1MC01-02-FEB95 0D03c HYC532100-Series	PDF