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    Micron Technology Inc MT4C1024DJ7

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    Micron Technology Inc MT4C1024DJ-10

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    Micron Technology Inc MT4C1024Z-8

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    HT Micron Semiconductors MT4C1024Z-10

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    Micron Technology Inc MT4C1024DJ-7

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    Component Electronics, Inc MT4C1024DJ-7 1
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    T4C1024 Datasheets Context Search

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    T4C1024DJ-7

    Abstract: MT4C1024
    Text: M T4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES • 512-cycle refresh in 8m s (M T4C1024) or 64ms (T4C1024 L) • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply


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    PDF T4C1024 512-cycle T4C1024) MT4C1024 18-Pin T4C1024DJ-7

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    Abstract: No abstract text available
    Text: T4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cy cle re fre sh in 8m s (M T 4C 1024) o r 6 4 m s (M T 4C 1024 L) • In d u stry -stan d a rd x l p in o u t, tim in g , fu n ctio n s and p ack ag e s


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    PDF MT4C1024 512-cy T4C1024

    MT4C1024-8

    Abstract: smd FAA smd marking S5B marking mpde G5705 Marking 62315 C19B MT4C1024
    Text: MICRON TECHNOLOGY INC SSE D b l l l S ^ GODSbS'l TM1 RI1CRON IMRN T4C1024 883C I MEG X 1 DRAM _ :_ T - < 4 t - 2 , v i £ MILITARY DRAM 1 MEG 1 DRAM X FAST PAGE MODE PIN ASSIGNMENT Top View • SMD (consult factory for reference number)


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    PDF MT4C1024 M38510/249 MIL-STD-883, 18-Pin 175mW T4C1084883C MT4C1024-8 smd FAA smd marking S5B marking mpde G5705 Marking 62315 C19B

    MT4C1024

    Abstract: No abstract text available
    Text: T4C1024 L 1 MEG X 1 DRAM |U|IC=RON 1 MEG x 1 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH • 512-cycle refresh in 8ms (T4C1024) or 64ms (T4C1024 L) • Industry-standard xl pinout, timing, functions and packages • High-performance CMOS silicon-gate process


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    PDF MT4C1024 512-cycle MT4C1024) 175mW 200nA 18-Pin 20-Pin

    MT4C1024DJ-7

    Abstract: No abstract text available
    Text: T4C1024 L 1 MEG X 1 DRAM MICRON • SEMICONDUCTOR. iHC 1 MEG x 1 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 512-cycle refresh in 8ms (T4C1024) or 64ms (T4C1024 L) • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process


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    PDF MT4C1024 512-cycle MT4C1024) 175mW 18-Pin 11G3D MT4C1024DJ-7

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    Abstract: No abstract text available
    Text: T4C1024 L MEG X 1 DRAM 1 MEG DRAM X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, .3mW standby; 150mW active, typical


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    PDF MT4C1024 150mW 512-cycle 18-Pin MT4C1024L

    MT4C1024

    Abstract: No abstract text available
    Text: MICRO N T E C H N O L O G Y INC SSE D • 1=11154^ G D D 4 1 7 4 17T « M R N T4C1024 L 1 MEG X 1 DRAM |VtlC=RON DRAM 1 MEG X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process


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    PDF MT4C1024 150mW 512-cycle 18-Pin T4C1024I