Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PVB42004X Search Results

    PVB42004X Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PVB42004X Philips Semiconductors NPN microwave power transistor Original PDF
    PVB42004X Philips Semiconductors Microwave Power Transistor Original PDF
    PVB42004X Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    PVB42004X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PVB42004X

    Abstract: SC15 sot445
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


    Original
    PDF PVB42004X OT445A SCA53 127147/00/02/pp8 PVB42004X SC15 sot445

    PVB42004X

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor PVB42004X FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan
    PDF PVB42004X OT445A) MGL019 OT445A. PVB42004X SC15

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:


    OCR Scan
    PDF PVB42004X

    Transistor z1

    Abstract: PVB42004X
    Text: N AMER P HI LI P S/ D I S C R E T E GbE D • 00 15 121 T PVB42004X T - 2 ,1 - 07 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features: • Interdigitated structure giving a high emitter efficiency


    OCR Scan
    PDF PVB42004X FO-83) bb53T31 D01S15S PVB42004X Transistor z1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PVB42004X PINNING - SOT445A • tnterdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan
    PDF PVB42004X OT445A

    Untitled

    Abstract: No abstract text available
    Text: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B


    OCR Scan
    PDF 001fc PTB23001X PTB23003X PTB23005X FO-41B PTB32001X PTB32003X PTB32005X

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan
    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan
    PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan
    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan
    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan
    PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan
    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    OP222

    Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
    Text: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B


    OCR Scan
    PDF PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan
    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11