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Panasonic Electronic Components ARX1012 RELAY RF SPDT 500MA 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ARX1012	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Spectrol 14810A0BBRX10104MA POT CONDUCTIVE PLASTIC ELEMENT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	14810A0BBRX10104MA	Box			35	1 - 10 - 100 $20.61886 1000 $20.61886 10000 $20.61886	Buy Now
Vishay Sfernice P11A3A0CCRX10103MA POT 10K OHM 1/2W PLASTIC LINEAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	P11A3A0CCRX10103MA	Box			30	1 - 10 - 100 $33.185 1000 $33.185 10000 $33.185	Buy Now
Vishay Intertechnologies 14810A0BBRX10104MA Rotary Potentiometer, Conductive Plastic, 100 kOhm, 1Turn, Linear, 500 mW, ± 20% - Boxed Product (Development Kits) (Alt: 14810A0BBRX10104MA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	14810A0BBRX10104MA	Box		12 Weeks	35	1 - 10 - 100 $13.57548 1000 $9.09226 10000 $7.53435	Buy Now
Vishay Intertechnologies P11A3A0CCRX10103MA Rotary Potentiometer, Conductive Plastic, 10 kOhm, 1Turn, Linear, 500 mW, ± 20% - Boxed Product (Development Kits) (Alt: P11A3A0CCRX10103MA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	P11A3A0CCRX10103MA	Box		12 Weeks	30	1 - 10 - 100 $36.11223 1000 $36.11223 10000 $36.11223	Buy Now

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RX101 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
RX1010		RF Monolithics	433.92 MHz ASH Receiver		Original	PDF
RX1011B250Y		Philips Semiconductors	Pulsed Microwave Power Transistor		Original	PDF
RX1011B350Y		Philips Semiconductors	Pulsed Microwave Power Transistor		Original	PDF

RX101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RX1010 Abstract: 902-925 rx 433 saw CR2032 MC145028 RX1000 Text: RX1010 433.92 MHz • • • • • ASH Receiver Ideal for 433.92 MHz, 3 V Receivers in Europe I-ETS 300 220 High-Sensitivity Passive Design with No RF Oscillation Baseband Data Rate of 10 kbps Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint	Original	PDF	RX1010 filSM-10 RX1010-121198 RX1010 902-925 rx 433 saw CR2032 MC145028 RX1000
rfm 1207-5 Abstract: 433,92 resonator RP1207-5 433.92 Mhz two-port saw resonator 133524 MPSH10 P1239 RF1172 rx1305 IC rp1102 Text: Low Power Components Short Form Catalog l Introduction l Selection Guide by Frequency Application l Master Index Sorted by Frequency l Master Index Sorted by Lid Symbol l Typical Radio Types l Superhet Receiver Example l RO Series l RP Series l RF Series l	Original	PDF	100ppm rfm 1207-5 433,92 resonator RP1207-5 433.92 Mhz two-port saw resonator 133524 MPSH10 P1239 RF1172 rx1305 IC rp1102
RX1011B350Y Abstract: broad-band Microwave Class-C Transistor Amplifiers Text: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C	OCR Scan	PDF	RX1011B350Y T-33- 7Z23071 RX1011B350Y broad-band Microwave Class-C Transistor Amplifiers
Untitled Abstract: No abstract text available Text: D E VE LO PM EN T DATA OLE D bb53T31 0015175 0 RX1011B250Y This data sheet contains advance information and specifications are subject to change w ithout notice. _ N AMER PHILIPS/DISCRETE - T - S S - I S - PULSED MICROWAVE POWER TRANSISTOR	OCR Scan	PDF	bb53T31 RX1011B250Y DDlS17fl
RX101 Abstract: No abstract text available Text: RIFU RX1010 Ideal f o r 433.92 MHz, 3 V R eceivers in E urope I-E TS 300 220 • H igh-Sensitivity P assive D esign with N o R F O scillation • B aseband D ata R ate o f 10 kb/s • Sim ple to A pply w ith L ow E xternal P arts C ount • Rugged, Surface-M ount Package with 130 m m 2 Footprint	OCR Scan	PDF	RX1010 RFMRX1010 RX101
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C	OCR Scan	PDF	1S171 RX1011B350Y
Untitled Abstract: No abstract text available Text: RX1010 433.92 MHz ASH Receiver Ideal fo r 433.92 MHz, 3 V Receivers in Europe I-ETS 300 220 High-Sensitivity Passive Design with No RF Oscillation Baseband Data Rate o f 10 kb/s Simple to Apply with External Parts Count Rugged\ Surface-M ount Package with 130 nan2 Footprint	OCR Scan	PDF	RX1010
Untitled Abstract: No abstract text available Text: RX1010 • Ideal for 433.92 MHz, 3 V Receivers in Europe l-ETS 300 220 • High-Sensitivity Passive Design with No RF Oscillation • 10 kb/s Baseband Data Rate 433.92 MHz A S H Receiver • Simple to Apply with Low External Parts Count • Rugged, Surface-Mount Package with 1.3 cm2 Footprint	OCR Scan	PDF	RX1010 RX1010 CHP-A-02-120994AC
MX0912B250Y Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4	OCR Scan	PDF	RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
RX1011B250Y Abstract: No abstract text available Text: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.	OCR Scan	PDF	DD1S17S RX1011B250Y VCB-50 VCE-20 0Q1S17Ã T-33-15 RX1011B250Y
CS1000 Abstract: CS1300 IC1001 rx1310 rx2020 Text: Low-Power Virtual Wire Radio Systems Selection Guide f \|X f^ÎÊÎià È Ê âS É ÎÈ Ê ÎÎÊ âÊ ^. D ftM H ttN N i 303.825 Australia, USA Korea, Japan 304.0 315.0 Australia Canada, Italy USA 403.55 418.0 South Africa UK, USA 433.92 ETSI European Regulations,	OCR Scan	PDF	HX1002 HX1002-1 HX1006 HX1006-1 AT1004 HX1005 HX1005-2 AT1003 AT1005 HX1003 CS1000 CS1300 IC1001 rx1310 rx2020
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50	OCR Scan	PDF	RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc