Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2
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OT445B
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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OT445B
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sot445
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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OT445C
sot445
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BLS3135-10
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications
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M3D324
BLS3135-10
OT445C
603516/01/pp12
BLS3135-10
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2
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OT445A
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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OT445A
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1721E50R
Abstract: MSA096 LV1721E50R
Text: DISCRETE SEMICONDUCTORS DATA SHEET LV1721E50R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency
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LV1721E50R
OT445A
SCA53
127147/00/02/pp8
1721E50R
MSA096
LV1721E50R
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BLS2731-10
Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications
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M3D324
BLS2731-10
OT445C
SCA60
125108/00/04/pp12
BLS2731-10
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2
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OT445C
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BP317
Abstract: LVE21050R
Text: DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R FEATURES PINNING - SOT445A • Diffused emitter ballasting resistors provide excellent
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LVE21050R
OT445A
SCA53
127147/00/02/pp8
BP317
LVE21050R
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BLS2731-20
Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications
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M3D324
BLS2731-20
OT445C
SCA60
125108/00/04/pp8
BLS2731-20
RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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PVB42004X
Abstract: SC15 sot445
Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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PVB42004X
OT445A
SCA53
127147/00/02/pp8
PVB42004X
SC15
sot445
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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PVB42004X
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PVB42004X FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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PVB42004X
OT445A)
MGL019
OT445A.
PVB42004X
SC15
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E50R
Abstract: 1721E50R MAM251 LV1721E50R SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEA TU R ES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high V S W R
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OCR Scan
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LV1721E50R
OT445A.
E50R
1721E50R
MAM251
LV1721E50R
SC15
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PDF
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TIC 122 Transistor
Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy
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OCR Scan
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BLS3135-10
OT445C
TIC 122 Transistor
RF NPN POWER TRANSISTOR 3 GHZ
TRANSISTOR C 557 B
RF NPN POWER TRANSISTOR C 10-12 GHZ
BLS3135-10
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OCR Scan
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LV1721E50R
MQD960
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PDF
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2024E45R
Abstract: LV2024E45R SC15 MAM251
Text: Philips Semiconductors Product specification NPN microwave power transistor LV2024E45R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OCR Scan
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LV2024E45R
OT445A.
2024E45R
LV2024E45R
SC15
MAM251
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LVE21050R PINNING - SOT445A FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN DESCRIPTION 1 • Self-aligned process entirely ion implanted
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OCR Scan
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OT445A
LVE21050R
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PDF
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Untitled
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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OCR Scan
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OT122A
OT422A
OT423A
OT437A
OT439A
OT440A
OT441A
OT442A
OT443A
OT445A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PVB42004X PINNING - SOT445A • tnterdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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PVB42004X
OT445A
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LV2024E45R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OCR Scan
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LV2024E45R
OT445A
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PDF
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