MSA103
Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 MSA112
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PTB23001X; PTB23003X;
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PTB23001X;
PTB23003X;
PTB23005X
OT440A
SCA53
127147/00/02/pp12
MSA103
PERMITTIVITY* 2.55
PTB23001X
PTB23003X
PTB23005X
SC15
MSA112
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PTB23005X
Abstract: No abstract text available
Text: PTB23005X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI PTB23005X is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz
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PTB23005X
PTB23005X
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2N5944
2N5945
2N5946
2N6082
2N6084
2N6439
2SC1257
2SC1258
2SC1259
2SC1605A
MRF648
TPV3100
2SC2897
macom
TP3034
SD1393
TP3008
tp9383
transistor 2sC636
MRF255 equivalent
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2SC1257
2SC1258
2SC1259
2SC1605A
2SC1729
2SC1804
2SC1805
2SC1946
2SC1946A
2SC1967
2SC636
2sc635
MHW820-1
TP3008
2SC2897
SD1477
2sc2652
TP3034
2SC1804
SD1470
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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BGY916
BLF145
BLF175
BLF177
BLF242
BLF244
BLF245
BLF245B
BLF248
BLF278
SD1446
SD2910
philips blx15
BLV36
BLW60C
st cross reference
blw97
SD4575
BLV103
MX0912B350Y
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PTB20038
Abstract: PTB23005X
Text: PTB20038 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 6L FLG The ASI PTB20038 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold Metalization System
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PTB20038
PTB20038
PTB23005X
PTB23005X
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Untitled
Abstract: No abstract text available
Text: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B
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001fc
PTB23001X
PTB23003X
PTB23005X
FO-41B
PTB32001X
PTB32003X
PTB32005X
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copper permittivity
Abstract: MLC092
Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN 1 • Interdigitated structure provides high emitter efficiency
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OT440A
PTB23001X;
PTB23003X;
PTB23005Xps
K10kl
PTB23005X
PTB23001X.
copper permittivity
MLC092
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marking J6 transistors
Abstract: PKB23001U 2001M PKB23003U PKB23005U
Text: ObE D N AMER PHILIPS/DISCRETE M AINTENANCE TYPE replaced by PTB23001X/PTB23003X/PTB23005X ^ 5 3 ^ 3 1 QDISOÖT 7 • ~ PKB23001U PKB23003U PKB23005U T - 33-O S - f - 23-07 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up
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PTB23001X/PTB23003X/PTB23005X)
PKB23001U
PKB23003U
PKB23005U
33-OS-f~
B23001U:
2001M
PKB23003U:
2003M
PKB23005U:
marking J6 transistors
PKB23001U
PKB23005U
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75307
Abstract: PTB23001X PTB23003X PTB23005X T-33-O
Text: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T 3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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iki53ci31
DG15Cm
PTB23001X
PTB23003X
PTB23005X
G01S1Q3
PTB23001X
75307
PTB23005X
T-33-O
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Untitled
Abstract: No abstract text available
Text: M i N AMER PHILIPS/DISCRETE ObE D • bbS3T31 _ J v □D150T1 T ■ PTB23001X PTB23003X PTB23005X T - 1 3 -o s '' T -IZ -O J MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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bbS3T31
D150T1
PTB23001X
PTB23003X
PTB23005X
PTB2300d
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D 1^ 53^31 001506*1 7 • PKB23001U PKB23003U PKB23005U MAINTENANCE TYPE replaced by PTB23001X/PTB23003X/PTB23005X 3 3 - O X f - 23-07 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up
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PKB23001U
PKB23003U
PKB23005U
PTB23001X/PTB23003X/PTB23005X)
PKB23001U
PKB23003U
April19B5l
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copper permittivity
Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 permittivity marking J6 transistors
Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency
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OT440A
PTB23001X;
PTB23ansistors
PTB23005X
PTB23005X.
PTB23003X;
OT440A.
copper permittivity
PERMITTIVITY* 2.55
PTB23001X
PTB23003X
PTB23005X
SC15
permittivity
marking J6 transistors
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H440
Abstract: PTB23001X PTB23003X PTB23003XA PTB23005X OC292
Text: P T B 23001X PTB23003X PT B 2 3 0 0 5 X PTB 23003XA PHILIPS INTERNATIONAL 5L.E T> m 7 11 0 fl2ti GCmfc.42fc, fl Tb M P H I N MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide
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PTB23001X
PTB23003X
PTB23005X
PTB23003XA
711Dfl2t
D04b42b
PTB23003XA
PTB23003X.
t-33-01
H440
OC292
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r3305
Abstract: PTB32005X PTB32001X PTB32003X
Text: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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PTB32001X
PTB32003X
PTB32005X
bfci53cÃ
001510e}
PTB32003X
r3305
PTB32005X
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR
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RX1214B80W
RX1214B130Y
RX1214B170W
RX1214B300Y
RX1214B350Y
RZ1214B35Y
RZ1214B65Y
BLS2731-10
BLS2731-20
BLS2731
Philips Semiconductors Selection Guide
LTE42005S
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50
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BLS2731-10
BLS2731-20
BLS2731-50
BLS2731-110
BLS2731-150
LBE2003S
LBE2009S
LFE15600X
LLE15180xX
LLE15370X
LFE15
LAE4001R
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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Untitled
Abstract: No abstract text available
Text: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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001S1DS
bhS3T31
PTB32001X
PTB32003X
PTB32005X
PTB32001X.
r-33-07
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