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    PTB23 Search Results

    PTB23 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTB23001X Philips Semiconductors NPN microwave power transistors Original PDF
    PTB23001X Philips Semiconductors Microwave Power Transistor Original PDF
    PTB23001X Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PTB23001X Philips Semiconductors NPN microwave power transistors Scan PDF
    PTB23002U Philips Semiconductors NPN Microwave Power Transistor Original PDF
    PTB23002U Philips Semiconductors NPN microwave power transistor Scan PDF
    PTB23003X Philips Semiconductors NPN microwave power transistor Original PDF
    PTB23003X Philips Semiconductors Microwave Power Transistor Original PDF
    PTB23003X Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PTB23003X Philips Semiconductors NPN microwave power transistors Scan PDF
    PTB23003XA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PTB23003XA Philips Semiconductors Microwave Power Transistor Scan PDF
    PTB23005X Advanced Semiconductor Transistor Original PDF
    PTB23005X Philips Semiconductors NPN microwave power transistors Original PDF
    PTB23005X Philips Semiconductors Microwave Power Transistor Original PDF
    PTB23005X Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PTB23005X Philips Semiconductors NPN microwave power transistors Scan PDF
    PTB23006U Philips Semiconductors Microwave Power Transistor Original PDF
    PTB23006U Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Scan PDF
    PTB23006U Philips Semiconductors Microwave power transistor Scan PDF

    PTB23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSA103

    Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 MSA112
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PTB23001X; PTB23003X;


    Original     		PDF PTB23001X; PTB23003X; PTB23005X OT440A SCA53 127147/00/02/pp12 MSA103 PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 MSA112

    E 1007

    Abstract: PTB23002U
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network


    Original     		PDF PTB23002U SCA53 127147/00/02/pp12 E 1007 PTB23002U

    PTB23005X

    Abstract: No abstract text available
    Text: PTB23005X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI PTB23005X is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz


    Original     		PDF PTB23005X PTB23005X

    PTB23006U

    Abstract: MLC718 SOT440A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors


    Original     		PDF PTB23006U SCA53 127147/00/02/pp12 PTB23006U MLC718 SOT440A

    MSA103

    Abstract: BP317 PTB23003X DSA005130 SOT440A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES


    Original     		PDF M3D031 PTB23003X OT440A SCA55 127147/00/03/pp8 MSA103 BP317 PTB23003X DSA005130 SOT440A

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: K51P100M72SF1 Rev. 2, 4/2012 K51P100M72SF1 K51 Sub-Family Supports: MK51DX256CLL7, MK51DX256CML7 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V


    Original     		PDF K51P100M72SF1 K51P100M72SF1 MK51DX256CLL7, MK51DX256CML7 16-channel

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Advance Information K30 Sub-Family Document Number: K30P144M100SF2V2 Rev. 1, 6/2012 K30P144M100SF2V2 Supports the following: MK30DX128VLQ10, MK30DX128VMD10, MK30DX256VLQ10, MK30DX256VMD10, MK30DN512VLQ10, MK30DN512VMD10


    Original     		PDF K30P144M100SF2V2 MK30DX128VLQ10, MK30DX128VMD10, MK30DX256VLQ10, MK30DX256VMD10, MK30DN512VLQ10, MK30DN512VMD10

    kinetis k53

    Abstract: TS 6811
    Text: Freescale Semiconductor Data Sheet: Advance Information K53 Sub-Family Document Number: K53P144M100SF2V2 Rev. 1, 6/2012 K53P144M100SF2V2 Supports the following: MK53DN512CLQ10, MK53DN512CMD10, MK53DX256CLQ10, MK53DX256CMD10 Features • Operating Characteristics


    Original     		PDF K53P144M100SF2V2 MK53DN512CLQ10, MK53DN512CMD10, MK53DX256CLQ10, MK53DX256CMD10 kinetis k53 TS 6811

    MK60FX512VLQ15

    Abstract: MK60FN1M0VLQ15 K60P144
    Text: Freescale Semiconductor Data Sheet: Technical Data K60 Sub-Family Document Number: K60P144M150SF3 Rev. 4, 10/2012 K60P144M150SF3 Supports the following: MK60FX512VLQ15, MK60FN1M0VLQ15, MK60FX512VMD15, MK60FN1M0VMD15 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V


    Original     		PDF K60P144M150SF3 MK60FX512VLQ15, MK60FN1M0VLQ15, MK60FX512VMD15, MK60FN1M0VMD15 EzPor00-521-6274 MK60FX512VLQ15 MK60FN1M0VLQ15 K60P144

    K21P144M120SF5

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Technical Data K21 Sub-Family Data Sheet Document Number: K21P144M120SF5 Rev. 3, 08/2013 K21P144M120SF5 Supports the following: MK21FX512VLQ12, MK21FN1M0VLQ12, MK21FX512VMD12, MK21FN1M0VMD12 Features • Operating Characteristics


    Original     		PDF K21P144M120SF5 MK21FX512VLQ12, MK21FN1M0VLQ12, MK21FX512VMD12, MK21FN1M0VMD12 K21P144M120SF5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Technical Data K52 Sub-Family Document Number: K52P144M100SF2V2 Rev. 3, 6/2013 K52P144M100SF2V2 Supports the following: MK52DN512CLQ10, MK52DN512CMD10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V


    Original     		PDF K52P144M100SF2V2 MK52DN512CLQ10, MK52DN512CMD10 2013Freescale

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Technical Data K40 Sub-Family Document Number: K40P144M100SF2V2 Rev. 3, 6/2013 K40P144M100SF2V2 Supports the following: MK40DX128VLQ10, MK40DX128VMD10, MK40DX256VLQ10, MK40DX256VMD10, MK40DN512VLQ10, MK40DN512VMD10 Features


    Original     		PDF K40P144M100SF2V2 MK40DX128VLQ10, MK40DX128VMD10, MK40DX256VLQ10, MK40DX256VMD10, MK40DN512VLQ10, MK40DN512VMD10 2013Freescale

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Technical Data K10 Sub-Family Document Number: K10P121M100SF2V2 Rev. 3, 6/2013 K10P121M100SF2V2 Supports the following: MK10DN512VMC10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V


    Original     		PDF K10P121M100SF2V2 MK10DN512VMC10 2013Freescale

    H440

    Abstract: PTB23001X PTB23003X PTB23003XA PTB23005X OC292
    Text: P T B 23001X PTB23003X PT B 2 3 0 0 5 X PTB 23003XA PHILIPS INTERNATIONAL 5L.E T> m 7 11 0 fl2ti GCmfc.42fc, fl Tb M P H I N MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide


    OCR Scan     		PDF PTB23001X PTB23003X PTB23005X PTB23003XA 711Dfl2t D04b42b PTB23003XA PTB23003X. t-33-01 H440 OC292

    RTC1005

    Abstract: PKB12005U PTB23003X
    Text: N AMER PHILIPS/ D IS CRE TE MAINTENANCE TYPE ObE ]> • t.bS3T31 001SGfl5 T r E " PKB12005lT “ for new design use PTB23003X y I I y r-33-g?7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF b53131 001SDfl5 PKB12005lT PTB23003X) RTC1005 PKB12005U PTB23003X

    RTC1005

    Abstract: No abstract text available
    Text: N AflER PH IL IP S/ D IS C R ET E DbE D • MAINTENANCE TYPE for new design use PTB23003X _ GGS3G31 QGISDflS T ■ A PKB12005lT 3 1 ^ 7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF PTB23003X) GGS3G31 PKB12005lT RTC1005

    copper permittivity

    Abstract: MLC092
    Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN 1 • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF OT440A PTB23001X; PTB23003X; PTB23005Xps K10kl PTB23005X PTB23001X. copper permittivity MLC092

    marking J6 transistors

    Abstract: PKB23001U 2001M PKB23003U PKB23005U
    Text: ObE D N AMER PHILIPS/DISCRETE M AINTENANCE TYPE replaced by PTB23001X/PTB23003X/PTB23005X ^ 5 3 ^ 3 1 QDISOÖT 7 • ~ PKB23001U PKB23003U PKB23005U T - 33-O S - f - 23-07 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up


    OCR Scan     		PDF PTB23001X/PTB23003X/PTB23005X) PKB23001U PKB23003U PKB23005U 33-OS-f~ B23001U: 2001M PKB23003U: 2003M PKB23005U: marking J6 transistors PKB23001U PKB23005U

    75307

    Abstract: PTB23001X PTB23003X PTB23005X T-33-O
    Text: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T ­ 3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PDF iki53ci31 DG15Cm PTB23001X PTB23003X PTB23005X G01S1Q3 PTB23001X 75307 PTB23005X T-33-O

    Untitled

    Abstract: No abstract text available
    Text: M i N AMER PHILIPS/DISCRETE ObE D • bbS3T31 _ J v □D150T1 T ■ PTB23001X PTB23003X PTB23005X T - 1 3 -o s '' T -IZ -O J MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PDF bbS3T31 D150T1 PTB23001X PTB23003X PTB23005X PTB2300d

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D 1^ 53^31 001506*1 7 • PKB23001U PKB23003U PKB23005U MAINTENANCE TYPE replaced by PTB23001X/PTB23003X/PTB23005X 3 3 - O X f - 23-07 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up


    OCR Scan     		PDF PKB23001U PKB23003U PKB23005U PTB23001X/PTB23003X/PTB23005X) PKB23001U PKB23003U April19B5l

    copper permittivity

    Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 permittivity marking J6 transistors
    Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF OT440A PTB23001X; PTB23ansistors PTB23005X PTB23005X. PTB23003X; OT440A. copper permittivity PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 permittivity marking J6 transistors

    OP222

    Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
    Text: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B


    OCR Scan     		PDF PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X

    transistor c 5855

    Abstract: PTB23006U SC15
    Text: Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U FEATURES QUICK REFERENCE DATA • Very high power gain Microwave performance up to T mb = 25 °C in a common-base class C • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF PTB23006U OT440A OT44QA. transistor c 5855 PTB23006U SC15