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    POWER MOSFET TO247 55V Search Results

    POWER MOSFET TO247 55V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET TO247 55V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T PDF

    Untitled

    Abstract: No abstract text available
    Text: STW240NF55 N-CHANNEL 55V - 0.0027 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW240NF55 • ■ ■ VDSS RDS on ID(1) 55V <0.0035Ω 120A TYPICAL RDS(on) = 0.0027Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of


    Original     		STW240NF55 O-247 O-247 STW240NF55 W240NF55 PDF

    STW240NF55

    Abstract: No abstract text available
    Text: STW240NF55 N-CHANNEL 55V - 0.0027 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW240NF55 • ■ ■ VDSS RDS on ID(1) 55V <0.0035Ω 120A TYPICAL RDS(on) = 0.0027Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of


    Original     		STW240NF55 O-247 STW24 STW240NF55 PDF

    Untitled

    Abstract: No abstract text available
    Text: STW240NF55 N-CHANNEL 55V - 0.0027 W - 120A TO-247 STripFET II POWER MOSFET TYPE STW240NF55 • ■ ■ VDSS RDS on ID(1) 55V <0.0035W 120A TYPICAL RDS(on) = 0.0027W STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of


    Original     		O-247 STW240NF55 O-247 STW240NF55 W240NF55 PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    W240NF55

    Abstract: STW240NF55
    Text: STW240NF55 N-CHANNEL 55V - 0.0027 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW240NF55 • ■ ■ VDSS RDS on ID(1) 55V <0.0035Ω 120A TYPICAL RDS(on) = 0.0027Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of


    Original     		STW240NF55 O-247 W240NF55 STW240NF55 PDF

    STW80NF55-06

    Abstract: No abstract text available
    Text: STW80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A TO-247 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STW80NF55-06 • ■ ■ VDSS RDS on ID 55 V < 0.0065 Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION


    Original     		STW80NF55-06 O-247 STW80NF55-06 PDF

    STW80NF55-06

    Abstract: No abstract text available
    Text: STW80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A TO-247 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STW80NF55-06 • ■ ■ VDSS RDS on ID 55 V < 0.0065 Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION


    Original     		STW80NF55-06 O-247 STW80NF55-06 PDF

    STW80NF55-08

    Abstract: No abstract text available
    Text: STW80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A TO-247 STripFET POWER MOSFET TYPE STW80NF55-08 • ■ ■ ■ VDSS RDS on ID 55 V < 0.008 Ω 80 A TYPICAL RDS(on) = 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 2 1 DESCRIPTION


    Original     		O-247 STW80NF55-08 O-247 STW80NF55-08 PDF

    STW80NF55-08

    Abstract: No abstract text available
    Text: STW80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A TO-247 STripFET POWER MOSFET TYPE STW80NF55-08 • ■ ■ ■ VDSS RDS on ID 55 V < 0.008 Ω 80 A TYPICAL RDS(on) = 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 2 1 DESCRIPTION


    Original     		STW80NF55-08 O-247 STW80NF55-08 PDF

    P150NF55

    Abstract: w150nf55 B150NF55 STB150NF55 STP150NF55 to247 pcb footprint STB150NF55T4 STW150NF55
    Text: STB150NF55 STP150NF55 STW150NF55 N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB150NF55 STP150NF55 STP150NF55 • ■ VDSS RDS on ID 55 V 55 V 55 V <0.006 Ω <0.006 Ω <0.006 Ω 120 A(*) 120 A(*)


    Original     		STB150NF55 STP150NF55 STW150NF55 -120A PAK/TO-220/TO-247 STB150NF55 O-263) O-263 P150NF55 w150nf55 B150NF55 STP150NF55 to247 pcb footprint STB150NF55T4 STW150NF55 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005Ω - 120A - D2PAK/TO-220/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB150NF55 55V <0.006Ω 120A(1) STP150NF55 55V <0.006Ω 120A(1) STW150NF55 55V <0.006Ω 120A(1) 3


    Original     		STB150NF55 STP150NF55 STW150NF55 D2PAK/TO-220/TO-247 STP150NF55 O-220 O-247 PDF

    STW80NF55-08

    Abstract: No abstract text available
    Text: STW80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A TO-247 STripFET POWER MOSFET TYPE STW80NF55-08 • ■ ■ ■ VDSS RDS on ID 55 V < 0.008 Ω 80 A TYPICAL RDS(on) = 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 2 1 DESCRIPTION


    Original     		STW80NF55-08 O-247 STW80NF55-08 PDF

    p150n

    Abstract: w150nf55 P150NF55 STB150NF55 B150NF55 STB150NF55T4 STP150NF55 STW150NF55 to247 pcb footprint
    Text: STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005Ω - 120A - D2PAK/TO-220/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB150NF55 55V <0.006Ω 120A(1) STP150NF55 55V <0.006Ω 120A(1) STW150NF55 55V <0.006Ω 120A(1) 3


    Original     		STB150NF55 STP150NF55 STW150NF55 D2PAK/TO-220/TO-247 STP150NF55 O-220 O-247 p150n w150nf55 P150NF55 STB150NF55 B150NF55 STB150NF55T4 STW150NF55 to247 pcb footprint PDF

    STW80NF55-06

    Abstract: No abstract text available
    Text: STW80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A TO-247 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STW80NF55-06 • ■ ■ VDSS RDS on ID 55 V < 0.0065 Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION


    Original     		STW80NF55-06 O-247 STW80NF55-06 PDF

    HRF3205 equivalent

    Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
    Text: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3


    Original     		LC00004 HUF75545P3 O-220AB SUP75N08-10 HUF75545S3S O-263AB HUF75645P3 HUF75645S3S HRF3205 equivalent IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent PDF

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


    Original     		BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge PDF

    FDH5500

    Abstract: TB334
    Text: FDH5500 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications „ Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A „ DC Linear Mode Control „ Typ Qg(10) = 118nC at VGS = 10V „ Solenoid and Motor Control „ Simulation Models „ Switching Regulators


    Original     		FDH5500 118nC -TB334, FDH5500 TB334 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTH280N055T IXTQ280N055T RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 280A Ω ≤ 3.2mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTH280N055T IXTQ280N055T O-247 280N055T 5-08-A PDF

    80508

    Abstract: TO-3P weight IXTH280N055T IXTQ 280N055T N-channel MOSFET to-247 50a IXTQ280N055T 280N055T
    Text: TrenchMVTM Power MOSFET IXTH280N055T IXTQ280N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 280A Ω ≤ 3.2mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTH280N055T IXTQ280N055T O-247 280N055T 5-08-A 80508 TO-3P weight IXTH280N055T IXTQ 280N055T N-channel MOSFET to-247 50a IXTQ280N055T PDF

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


    Original     		HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252 PDF

    c366

    Abstract: C369 c368 IRFP048N
    Text: PD - 9.1409A International IQ R Rectifier IRFP048N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V ^D S o n = 0.016Q lD = 64A Description


    OCR Scan     		IRFP048N O-247 C-368 C-369 c366 C369 c368 IRFP048N PDF