Memory
Abstract: FTS8L32512V
Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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FTS8L32512V
512Kx32
FTS8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
FTI8K32512V
Memory
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WS512K32-XXX
Abstract: No abstract text available
Text: WS512K32-XXX / EDI8C32512CA HI-RELIABILITY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ 5 Volt Power Supply ■ Packaging ■ Low Power CMOS ■ Built-in Decoupling Caps and Multiple Ground Pins for Low
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WS512K32-XXX
EDI8C32512CA
512Kx32
WS512K32-XH1X
WS512K32-XG2TX
EDI8C32512CA-E
WS512K32-XG4TX
WS512K32XXX
08HYX
09HYX
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AM29F010
Abstract: No abstract text available
Text: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable
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EDI7C32128C
128Kx32
EDI7C32128C
512Kx32
128Kx8
EDI7C32512C70EQ
EDI7C32512C70EI
AM29F010
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AM29LV004T
Abstract: EDI7F33512V
Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 512Kx32 and 512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
512Kx8
EDI7F33512V
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WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
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Untitled
Abstract: No abstract text available
Text: WF512K32-XXX5 512Kx32 5V NOR FLASH MODULE SMD 5962-94612* FEATURES Access Times of 60, 70, 90, 120, 150ns Low Power CMOS Packaging Embedded Erase and Program Algorithms • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
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WF512K32-XXX5
512Kx32
150ns
WF512K32-XG2UX5
WF512K32N-XH1X5
WF512K32-XG4TX5
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Untitled
Abstract: No abstract text available
Text: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two
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WED2DL32512V
512Kx32
133MHz
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Untitled
Abstract: No abstract text available
Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O0-31
A0-18
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Untitled
Abstract: No abstract text available
Text: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns TTL Compatible Inputs and Outputs Packaging 5 Volt Power Supply Low Power CMOS • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
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WS512K32-XXX
512Kx32
WS512K32N-XH1X
WS512K32-XG2UX
WS512K32-XG4TX1
WS512K32-XG2LX
140A00143
MIL-STD-883
MIL-PRF-38534
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WS512K32V-XXX
Abstract: No abstract text available
Text: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • Access Times of 15, 17, 20ns ■ Low Voltage Operation ■ Low Power CMOS ■ Packaging ■ Fully Static Operation: ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic
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WS512K32V-XXX
512Kx32
66-pin,
WS512K32V-XG2TX
WS512K32NV-XH1X
512Kx32;
1Mx16
512Kx32
WS512K32V-XXX
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WS1M32-XG3X
Abstract: No abstract text available
Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as
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WS1M32-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32-XG3X
I/O31
I/O30
I/O29
I/O28
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df1818
Abstract: No abstract text available
Text: WED7F325ZXE5SJ-C/A 512Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • Access Times of 60, 90ns ■ Commercial and Industrial Temperature Ranges ■ Based on AMD: AM29F040B-xxEC ■ 5 Volt Programming. 5V ± 10% Supply ■ Packaging ■ Low Power CMOS, 500µA Standby
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WED7F325ZXE5SJ-C/A
512Kx32
AM29F040B-xxEC
64KBytes
df1818
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KM4132G512Q
Abstract: BA 59 04A F P SM 11039 sgram
Text: SGRAM MODULE KM M 965G112Q P N / KMM966G112Q(P)N 8MB SGRAM MODULE (1 Mx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 March 1998 . i _ &prrranNre This Material Copyrighted By Its Respective Manufacturer
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KMM965G112Q
KMM966G112Q
512Kx32
64-bit
144-pin
KM4132G512Q
BA 59 04A F P
SM 11039
sgram
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI7C32512C _ ELECTRONIC DESIGNS, INC 512Kx32 Flash 512Kx32 High Speed Flash Module Features The EDI7C32512C is a high speed, high performance, sixteen megabit density Flash module, organized as 512Kx32 bits, containing four 512Kx8 die mounted in a package.
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EDI7C32512C
512Kx32
EDI7C32512C
512Kx32
512Kx8
EDI7C32512C70EQ
EDI7C32512C90EQ
EDI7C32512C120EQ
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Untitled
Abstract: No abstract text available
Text: a WPS4M 32-35MSC M/HITE /MICROELECTRONICS 4Mx32SRAM MODULE ADVANCED* FEATURES • ■ A ccess Tim e of 35ns ■ Packaging ■ B yte C ontrol Chip S elects Fully S ta tic O peration • No C lock or Refresh required • M o d u le is m a nufa cture d w ith eig h t 512Kx32 SRAM
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32-35MSC
4Mx32SRAM
512Kx32
72-PIN
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS W PS512K32-XPJX 512Kx32 SRAM MODULE FEATURES • A c c e s s T i m e s o f 1 5 , 1 7 , 2 0, 2 5 n s ■ T TL C o m p a t i b l e In p u ts a n d C M O S O u tp u t s ■ P a c k a g in g ■ 5 V o l t P o w e r S u p p ly • 68 Lead, P la s tic PLCC, 2 5 . 1 5 m m 0 .9 9 0 inch sq u a re
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PS512K32-XPJX
512Kx32
WPS512K32-XPJX
WPS512K32-XPJX
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Untitled
Abstract: No abstract text available
Text: TT WHITE /MICROELECTRONICS 512Kx32 5V FLASH MODULE WPF512K32-XPJX5 PRELIMINARY* FEATURES • A cce ss Tim es of 60, 90ns C om m ercial and Industrial Te m p e ra tu re Ranges ■ Packaging 5 V o lt P rogram m ing. 5V + 10% Supply • 68 Lead, Plastic PLCC, 24.94 mm 0.982 inch square
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WPF512K32-XPJX5
512Kx32
512K32
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Untitled
Abstract: No abstract text available
Text: '! i/VH IT E /M ICROELECTRONICS 512Kx32 SRAM MODULE WPS512K32V-XPJC AD VAN C ED * FEATURES • A ccess Tim es of 15, 17, 20, 25ns ■ TTL Com patible Inputs and CMOS Outputs ■ Low Voltage Operation: ■ Fully S tatic Operation: • 3.3V ± 10% Power Supply
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WPS512K32V-XPJC
512Kx32
68-lead,
512Kx32
512K32
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Untitled
Abstract: No abstract text available
Text: WHITE /MICROELECTRONICS 512Kx32 5V FLASH SIMM WPF512K32-90PSC5 PRELIMINARY* FEATURES • A cce ss Tim e o f 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as 512Kx32 • 80 pin S IM M ■ C om m ercial Te m p e ra tu re Range • The m o du le is m a n u fa c tu re d w it h fo u r 512Kx8 CMOS Flash
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512Kx32
512Kx8
WPF512K32-90PSC5
512Kx32
512K32-
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Untitled
Abstract: No abstract text available
Text: W E l e c t r o n ic h it e D C e s ig n s W S512K32-XXX o r p o r a t io n 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Tim es of 15*, 17, 20, 25, 35, 45, 55ns ■ TTL Compatible Inputs and Outputs ■ Packaging ■ 5 V o lt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
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S512K32-XXX
512Kx32
512Kx32,
10HYX
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WF512K32-XXX5 512Kx32 5V FLASH M ODULE, SM D 5962-94612 FEATURES • A ccess Tim es of 70, 9 0 , 1 2 0 , 150ns ■ O rganized as 512Kx32 ■ Packaging ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Ranges • 66 -pin, PGA Type, 1.075 inch square, H erm etic
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WF512K32-XXX5
512Kx32
150ns
64KBytes
120ns
150ns
120ns
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Untitled
Abstract: No abstract text available
Text: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:
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WS512K32BV-XCJCE
512Kx32
68-lead,
512Kx32;
1Mx16
WS512K32BV-XCJCE
68LEADJLCC
WS512K32BV-XC
512K32
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Untitled
Abstract: No abstract text available
Text: !. f WS512K32-XCJC WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE p r e l im in a r y * FEATURES • A c c e s s T im e s o f 17, 2 0 , 2 5 , 3 5 a nd 4 5 n s ■ TTL C o m p a t ib l e In puts a nd C M O S O u tp u ts ■ 6 8 - l e a d , JLCC, P a c k a g e 701
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WS512K32-XCJC
512Kx32
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Untitled
Abstract: No abstract text available
Text: ^EDI EDÌ8L32512C ELECTRONIC DESIGNS INC.- High Performance 16 Megabit SRAM 512Kx32 CMOS High Speed Static RAM A W M O l D iF @ [R s i^ \T [ i Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit
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8L32512C
512Kx32
EDI8L32512C
1Mx16
EDI8L32512C,
EDI8L32512C15AC
EDI8L32512C17AC
EDI8L32512C20AC
EDI8L32512C25AC
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