tele odq1
Abstract: odq1 Tele Control tele RELAY fuse 8A 1000VA led flasher diagrams free a1151 D-82069
Text: ODQ1 Timer - OCTO series Installation design Width 17.5 mm 4 functions, 6 time ranges 1 change-over contact Technical data: 1. Functions 6. Output circuit E R Wu Bp 1 potential free change-over contact Switching capacity distance < 5mm : 750VA (3A / 250V AC)
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750VA
1000VA
60/min
100VA
D-82069
tele odq1
odq1
Tele Control
tele RELAY
fuse 8A
led flasher diagrams free
a1151
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Untitled
Abstract: No abstract text available
Text: T43?b24 ODQ1QMD O S'ÌE D VA RI -L CO INC I VRL 1 -5 0 -1 5 V C O -103 Voltage Controlled Oscillator 50-100 M Hz GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE Test Condition: + 15V @ 15 mA, max. D.C. Power Tuning Range 50-100 MHz min. + 10 dBm Power Output
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VCO-103
6061-T6.
UNC-38
QQ-N-290,
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Untitled
Abstract: No abstract text available
Text: CIRCUIT ASSEMBLY CORP bTE ]> • 2133756 ODQ1BB1 6S3 B K A C -Q } CONTACT I M2.6 P =0 . 4 5 THREADED STANDOFF . 0 5 0 TYP C' - 2 7 ] .071 [ 1. 80] CONT ACT POI NT .lie [3.00 ] NANOFLEX D SUB RIGHT ANGLE SOCKET Features .075 Cl. 91] Right angle construction for
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UL94V-0
CA-16NFDSR-12GT
CA-26NFDSR-12GT
CA-30NFDSR-12GT
CA-40NFDSR-12GT
CA-50NFDSR-12GT
CA-60NFDSR-12GT
CA-64NFDSR-12GT
CA-74NFDSR-12GT
CA-100NFDSR-12GT
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cq837
Abstract: No abstract text available
Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36
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364080AS
364080ASG
THM364080AS/ASG
TC514100ASJ
364080ASG
A0-A10
THM36408QAS
THM364080AS
THM364080ASG
cq837
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
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HYM581000A
HY514400
HYM581000AM
50nYCLE
1BB03-20-MAY93
061MAX.
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01
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HYM564404A
64-bit
HY5116404A
HYM564404AKG/ATKG/ASLKG/ASLTKG
DQ0-DQ63)
4b75oaa
1CE16-10-APR95
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM532224A
32-bit
HY5117804B
HYM532224AE/ASLE/ATE/ASLTE
HYM532224AEG/ASLEG/ATEG/ASLTEG
171M1N
DD054M
1CE13-10-0EC94
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HYM536100M
Abstract: No abstract text available
Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted
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HYM536100
36-bit
HY514400
HY531000
22fiF
HYM536100M
HYM536100MG
1CC02-10-MAY93
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ba 5937 fp
Abstract: No abstract text available
Text: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads
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28F800F3,
28F160F3
ba 5937 fp
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Untitled
Abstract: No abstract text available
Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.
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32100A
32-blt
HYM532100A
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
compatible004M
750M6
004t1
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
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28F800F3T
Abstract: te28f800f3t120 B3T125
Text: intei PRELIMINARY 3 VOLT FAST BOOT BLOCK FLASH MEMORY 28F800F3 and 28F160F3 x16 • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads — Asynchronous Page-Mode Reads ■ Supports Code Plus Data Storage — Optimized for Flash Data Integrator
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28F800F3
28F160F3
32-Kword
56-Lead
28F800F3T
te28f800f3t120
B3T125
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA725 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA725 is an 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M
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MC-458CA725
72-BIT
MC-458CA725
uPD4564841
M168S-50A89
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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Untitled
Abstract: No abstract text available
Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The
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KMM466F104AT-L
KMM466F124AT-L
KMM466F124AT-L
1Mx64
1Mx16,
KMM466F10
1Mx16bit
44-pin
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Untitled
Abstract: No abstract text available
Text: a WPF29041-120G1XX WHITE /M ICROELECTRONICS 4MBYTE 1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE p r e lim in a r y * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics WPF29041-120G1XX is a 1M x 32 bits ■ 80-pin Flash Single In-line M em ory M odule (SI M M ). The WPF29041-
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WPF29041-120G1XX
1Mx32)
120ns
WPF29041-120G1XX
80-pin
WPF29041-
120G1XX
WPF29081-120G1XX
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374S6453AT
Abstract: No abstract text available
Text: KMM374S6453AT PC100 SDRAM MODULE KMM374S6453AT SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 374S6453AT is a 64M bit x 72 S ynchronous • Perform ance range
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KMM374S6453AT
KMM374S6453AT
PC100
64Mx72
32Mx8,
374S6453AT
6453AT
168-pin
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KMM366S403BTN-G2
Abstract: KMM366S403BTN-G0
Text: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S403BTN
KMM366S403BTN
4Mx64
400mil
168-pin
DD373b2
KMM366S403BTN-G2
KMM366S403BTN-G0
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KMM366F400BK
Abstract: No abstract text available
Text: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The
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KMM366F400BK
KMM366F410BK
4Mx64
KMM366F40
300mil
168-pin
110ns
KMM366F400BK
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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4Mx72
4Mx16
372E404BS
4096cycles/64ms
100Max
54Max)
KMM372E404BS
-KM416C4104BS
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kmm366s203b
Abstract: KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2
Text: KMM366S203BTN NEW JEDEC SDRAM MODULE KMM366S203BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203BTN is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S203BTN
KMM366S203BTN
2Mx64
400mil
168-pin
kmm366s203b
KMM366S203BTN-G0
KMM366S203BTN-G2 ram
kmm366s203btn-g2
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Untitled
Abstract: No abstract text available
Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification
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KMM53280
8Mx32bits
KMM5328000CK/CKG
KMM53281OOCK/CKG
KMM5328000CK/CKG
KMM53281
5328000CK
cycles/64ms
KMM5328000CKG
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Untitled
Abstract: No abstract text available
Text: KMM366S6453AT PC100 SDRAM MODULE KMM366S6453AT SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S6453AT is a 64M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S6453AT
KMM366S6453AT
PC100
64Mx64
32Mx8,
400mil
168-pin
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