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    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE Revision History Version 0.0 June 1998 • The 4th. generation of 16M DRAM components are applied for this module. KMM466F104CT1-L KMM466F124CT1-L KMM466F104CT1-L KMM466F124CT1-L DRAM MODULE KMM466F104CT1-L & KMM466F124CT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh


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    PDF KMM466F104CT1-L KMM466F124CT1-L KMM466F124CT1-L 1Mx16, KMM466F10 1Mx64bits

    Untitled

    Abstract: No abstract text available
    Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The


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    PDF KMM466F104AT-L KMM466F124AT-L KMM466F124AT-L 1Mx64 1Mx16, KMM466F10 1Mx16bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KM M 466F10 2 4AT-L is a 1M bit x • Part Identification


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    PDF KMM466F104AT-L KMM466F124AT-L KMM466F104AT-L KMM466F124AT-L 1Mx64 1Mx16, 466F10 x16bit 44-pin 144-pin

    ADQ37

    Abstract: No abstract text available
    Text: KMM466F104BT1-L KMM466F124BT1-L DRAM MODULE KM M 466F104BT1-L & KMM466F124BT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F10 2 4BT-L is a 1Mx64bits Dynamic RAM high density memory module. The Samsung


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    PDF KMM466F104BT1-L KMM466F124BT1-L 466F104BT1-L KMM466F124BT1-L 1Mx16, KMM466F10 1Mx64bits 1Mx16bits 400mil ADQ37

    Untitled

    Abstract: No abstract text available
    Text: KMM466F104BT1-L KMM466F124BT1-L DRAM M ODULE K M M 4 6 6 F 1 0 4 B T 1 - L & K M M 4 6 6 F 1 24BT1 -L ED O M o d e 1M x 64 DRAM SO DIM M using 1Mx16, 1K/4K Refresh 3.3V, Low pow er/Self-R efresh F E A TU R ES G E N E R A L DESCRIPTION T h e S am su ng K M M 4 6 6 F 1 0 2 4 B T -L is a 1M x64bits D ynam ic


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    PDF KMM466F104BT1-L KMM466F124BT1-L 24BT1 1Mx16, x64bits x16bits

    Untitled

    Abstract: No abstract text available
    Text: KMM466F104AT1-L ELECTRONICS DRAM Module KMM466F104AT1 -L & KMM466F124AT1-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM466F10 2 4AT1-L is a 1M bit x


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    PDF KMM466F104AT1-L KMM466F104AT1 KMM466F124AT1-L 1Mx64 1Mx16, KMM466F10 1Mx16bit 44-pin 400mil

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


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    PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    KMM366F213BK6

    Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7


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    PDF 2Mx36 4Mx32 8Mx32 KMM374F4l KMM374F410BK-6 8Mx64 MM366F883AK-5_ KMM366F883AK-6 KMM366F803AK-5 KMM374F KMM366F213BK6 KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12

    1MX16

    Abstract: KMM5324104BK KMM5321200B
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG


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    PDF 1Mx32 KMM5321200AW/AWG KMM5321200BW/BWG KMM5321204AW/AWG KMM5321204BW/BWG 1Mx36 M15361203A 1Mx16, 1Mx16 16Mx4, 1MX16 KMM5324104BK KMM5321200B

    KMM364C12

    Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for


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