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    NRF1 Search Results

    NRF1 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4NRF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NRF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NRF15XBG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-VFBGA177-1313-0.80-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NRF10XBG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-VFBGA177-1313-0.80-001 Visit Toshiba Electronic Devices & Storage Corporation
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    NRF1 Price and Stock

    IDEC Corporation NRF111-5A

    CIRCUIT PROTECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NRF111-5A Bulk 1
    • 1 $21.09
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    Mouser Electronics NRF111-5A
    • 1 $22.24
    • 10 $18.82
    • 100 $13.68
    • 1000 $11.54
    • 10000 $11.54
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    Newark NRF111-5A Bulk 1
    • 1 $18.58
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    • 100 $15.45
    • 1000 $13.41
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    Onlinecomponents.com NRF111-5A
    • 1 -
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    • 100 $11.37
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    Master Electronics NRF111-5A
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    Sager NRF111-5A 1
    • 1 $14.25
    • 10 $14.25
    • 100 $12.21
    • 1000 $11.87
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    IDEC Corporation NRF110-5A

    CIRCUIT PROTECTOR
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    DigiKey NRF110-5A Bulk 1
    • 1 $15.16
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    Mouser Electronics NRF110-5A
    • 1 $15.51
    • 10 $10.75
    • 100 $9.07
    • 1000 $7.91
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    Verical NRF110-5A 15 5
    • 1 -
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    • 100 $12.077
    • 1000 $11.362
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    Newark NRF110-5A Bulk 1
    • 1 $12.97
    • 10 $12.97
    • 100 $10.78
    • 1000 $9.36
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    Master Electronics NRF110-5A 18
    • 1 -
    • 10 $18.18
    • 100 $9.29
    • 1000 $8.41
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    Sager NRF110-5A 1
    • 1 $9.94
    • 10 $9.94
    • 100 $8.51
    • 1000 $8.28
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    IDEC Corporation NRF110-3A

    3A CIRCUIT PROTECTOR
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    DigiKey NRF110-3A Bulk 1
    • 1 $15.16
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    Mouser Electronics NRF110-3A
    • 1 $15.51
    • 10 $13.13
    • 100 $9.55
    • 1000 $7.82
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    Master Electronics NRF110-3A
    • 1 -
    • 10 $9.63
    • 100 $8.05
    • 1000 $7.27
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    IDEC Corporation NRF110W-3A

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    DigiKey NRF110W-3A Bulk 1
    • 1 $15.16
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    Mouser Electronics NRF110W-3A
    • 1 $15.51
    • 10 $13.13
    • 100 $9.55
    • 1000 $7.82
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    Onlinecomponents.com NRF110W-3A
    • 1 -
    • 10 $9.63
    • 100 $8.05
    • 1000 $7.27
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    Master Electronics NRF110W-3A
    • 1 -
    • 10 $9.63
    • 100 $8.05
    • 1000 $7.27
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    Sager NRF110W-3A 1
    • 1 $9.94
    • 10 $9.94
    • 100 $8.51
    • 1000 $8.28
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    IDEC Corporation NRF111-10A

    CIRCUIT PROTECTOR
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    DigiKey NRF111-10A Bulk 1
    • 1 $21.09
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    Onlinecomponents.com NRF111-10A
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    • 100 $11.37
    • 1000 $10.43
    • 10000 $10.43
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    Master Electronics NRF111-10A
    • 1 -
    • 10 $13.8
    • 100 $11.37
    • 1000 $10.43
    • 10000 $10.43
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    Sager NRF111-10A 1
    • 1 $14.25
    • 10 $14.25
    • 100 $12.21
    • 1000 $11.87
    • 10000 $11.87
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    Find more NRF1 price and stock on Findchips.com

    NRF1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELXY

    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		PDF NPT35050A 3A001b 750mA, NDS-003 PIMD3

    NPT1007

    Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
    Text: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		PDF NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR

    NPT1012

    Abstract: NPT1012B AC200BM-F2 AC200B
    Text: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in


    Original     		PDF NPT1012 DC-4000MHz 3000MHz 0-25W 1000-2500MHz 2-20W 30-1000MHz EAR99 3000MHz) 225mA, NPT1012B AC200BM-F2 AC200B

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		PDF NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3

    RF35 board 30mil

    Abstract: LT1964-BYP nichicon pw NPT35050A 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115
    Text: NPT35050A Datasheet Gallium Nitride 28V, 50W High Electron Mobility Transistor NPT35050A Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Si technology. FEATURES • Designed for 3.3-3.8 GHz WiMAX applications. • Typical OFDM performance at VDD = 28 Volts, IDQ =


    Original     		PDF NPT35050A NPT35050A 64-QAM RF35 board 30mil LT1964-BYP nichicon pw 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115

    NPT1010

    Abstract: a114 est J22 transistor AC360BM-F2 EAR99 JESD22-A114 JESD22-A115 49dBm nrf1 Nitron
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, a114 est J22 transistor AC360BM-F2 JESD22-A114 JESD22-A115 49dBm nrf1 Nitron

    Untitled

    Abstract: No abstract text available
    Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance


    Original     		PDF NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010

    PIMD3

    Abstract: No abstract text available
    Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


    Original     		PDF NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		PDF NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT

    Untitled

    Abstract: No abstract text available
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004

    NPT100

    Abstract: No abstract text available
    Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance


    Original     		PDF NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010 NPT100

    NPT25015DT

    Abstract: NPT25015DR
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR

    Untitled

    Abstract: No abstract text available
    Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in


    Original     		PDF NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,

    Untitled

    Abstract: No abstract text available
    Text: NPA1003 Preliminary Datasheet Gallium Nitride 28V, 5W, DC-1500MHz MMIC PA Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-1500MHz • Input and output matched to 50 Ohms


    Original     		PDF NPA1003 DC-1500MHz DC-1500MHz 38dBm 1000MHz 200MHz EAR99

    NPT1004

    Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz
    Text: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz


    Original     		PDF NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010 NPT1004DR NPT1004DT NPT1004D J-162 25001-2 JESD22-A113 JESD22-A114 2500-2700MHz