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    MACOM NPT1012B

    RF MOSFET HEMT 28V
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    Richardson RFPD NPT1012B 30
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    NPT1012B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NPT1012B M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 25W DC-4000MHZ Original PDF

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    NPT1012

    Abstract: NPT1012B AC200BM-F2 AC200B
    Text: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in


    Original     		PDF NPT1012 DC-4000MHz 3000MHz 0-25W 1000-2500MHz 2-20W 30-1000MHz EAR99 3000MHz) 225mA, NPT1012B AC200BM-F2 AC200B

    Untitled

    Abstract: No abstract text available
    Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in


    Original     		PDF NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,

    Untitled

    Abstract: No abstract text available
    Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in


    Original     		PDF NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,